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A kind of inert metal n-type dopant and its application in organic electroluminescent devices

An inert metal and dopant technology, applied in the field of organic electroluminescent devices, can solve the problems of difficult long-term storage and use, unclear mechanism of action, unfavorable industrial production, etc., achieving convenient storage and use, and stable evaporation atmosphere. , beneficial to the effect of industrial production

Active Publication Date: 2020-02-07
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this has a certain effect, Ag penetrates into Bphen [4,7-diphenyl-1,10-phenanthroline] or BCP [2,9-dimethyl-4,9-diphenyl-1 ,10-Phenanthroline] has a limited amount and can only form composites at the interface, and the mechanism of action is not clear
Chinese patent CN201110325422.2 discloses to dope ETM with active metal M to achieve n-type doping effect, in which this type of active metal itself has a low work function and directly acts as a strong reducing n-type dopant, and in the air Medium unstable, difficult to store and use for a long time, not conducive to industrial production

Method used

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  • A kind of inert metal n-type dopant and its application in organic electroluminescent devices
  • A kind of inert metal n-type dopant and its application in organic electroluminescent devices
  • A kind of inert metal n-type dopant and its application in organic electroluminescent devices

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preparation example Construction

[0033] The preparation process of the organic electroluminescent device of the present invention is the same as that of the prior art, wherein the preparation method of the electron transport layer 08 is the conventional vacuum evaporation technology.

[0034] The vapor deposition rate of metal should be slower, be 0.1 angstrom / second, at this rate, the host material of electron transport layer and dopant material have the contact between compound and inert metal with coordination property more fully, make inert metal M and The ligand Ligand is more uniformly dispersed in the host material ETM, which is conducive to compounding.

Embodiment 1

[0036] The structure of a single-electron device:

[0037] ITO / Bphen(100nm) / Ag or Au: ETM: Ligand=(1:1:10, 1:1:5, 1:2:5, 1:2:10, 5-100nm) / Al;

[0038] First electrode layer 02 (anode ITO) / hole blocking layer 07 (Bphen) / electron transport layer 08 (x%M-Ligand-ETM) / second electrode layer 03 (cathode Al).

[0039] The host material ETM structure of the electron transport layer in this embodiment is as follows formula (a), and the doped inert metal is Ag or Au.

[0040]

[0041] like figure 2 As shown, device 1 is the curve corresponding to ETM / Al, device 2 is the curve corresponding to Ag-ETM-Ligand1 / Al, device 3 is the curve corresponding to Ag-ETM-Ligand2 / Al, and device 4 is the curve corresponding to Au-ETM-Ligand1 / The curve corresponding to Al, device 5 is the curve corresponding to Au-ETM-Ligand2 / Al, the cathodes of devices 1-5 are all Al, where:

[0042] The electron transport layer 08 of the device 1 is the electron transport material shown in formula (a) (that is,...

Embodiment 2

[0049] Device structure:

[0050] ITO / HAT-CN(10nm) / NPB(30nm) / Alq 3 (30nm) / Bphen(20nm) / x%M-Ligand-ETM10nm / Ag;

[0051] The first electrode layer 02 (anode ITO), the hole injection layer 04 (HAT-CN), the hole transport layer 05 (NPB), the light emitting layer 06 (Alq 3 ), hole blocking layer 07 (Bphen), electron transport layer 08 (x%M-Ligand-ETM), second electrode layer 03 (cathode Ag).

[0052] The host material of the electron transport layer described in this embodiment is TPBI, which has the following structure:

[0053]

[0054] The host material, doped inert metal, and ligand compound of the electron transport layer described in this embodiment, as well as the composition ratio x% and doping ratio of the dopant are shown in Table 1 below, and are based on the existing Active metal doping is the control device.

[0055] Table 1 Material selection for each device

[0056] part number M Ligand M: Ligand ETM Mixing ratio vol% Device 6 Cu Fo...

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Abstract

The invention belongs to the technical field of organic electroluminescent devices, in particular to an n-type dopant based on an inert metal, and further discloses its application as an electron transport material dopant and its application in organic electroluminescent devices application. The n-type dopant based on the inert metal of the present invention includes an inert metal and a ligand compound with a coordination function, and the dopant is doped in a conventional electron transport host material, which can effectively reduce the electron transport material LUMO energy level, and then promote the injection of electrons, thereby significantly reducing the driving voltage of the device and improving the efficiency of the device.

Description

technical field [0001] The invention belongs to the technical field of organic electroluminescent devices, in particular to an n-type dopant based on an inert metal, and further discloses its application as an electron transport material dopant and its application in organic electroluminescent devices application. Background technique [0002] Organic Light Emitting Diode (OLED) is a multilayer organic thin film structure device that can emit light through electroluminescence. It has a variety of display characteristics and quality beyond LCD (Liquid Crystal Display). With its excellent characteristics such as low energy consumption and flexibility, it has a good application prospect and will become the next generation of mainstream flat-panel displays. [0003] In OLEDs, the LUMO energy level of the commonly used electron transport material (ETM) is around -3.0eV, and the work function of the metal cathode is generally greater than 4.0eV. Therefore, when electrons are dire...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54
CPCH10K85/00H10K50/00H10K50/165
Inventor 段炼宾正杨
Owner TSINGHUA UNIV
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