A driving circuit for a silicon carbide semiconductor field effect transistor

A field effect tube and drive circuit technology, which is applied in the field of silicon carbide semiconductor field effect tube drive circuit, can solve the problems of reduced switching speed, increased current overshoot, and small current peak, so as to reduce the current peak and accelerate the rising speed , Improve the effect of opening speed
CN109494969BActive Publication Date: 2020-07-10HUAZHONG UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
HUAZHONG UNIV OF SCI & TECH
Publication Date
2020-07-10

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Abstract

The invention discloses a driving circuit of a silicon-carbide semiconductor field-effect transistor. The driving circuit comprises a PWM control circuit, a driving signal amplifying circuit, an opening circuit, a turning-off circuit, a gate current-increasing circuit and a voltage change rate control circuit. With the gate current-increasing circuit, the driving current is increased during the opening process of the SiC MOSFET and the rising of the gate-source voltage of the SiC MOSFET is accelerated, so that the opening speed of the SiC MOSFET is increased. With the voltage change rate control circuit, the Miller capacitance between the SiC MOSFET drain and gate is enhanced and the SiC MOSFET drain-source voltage change rate is reduced, so that the current spike during opening of the SiCMOSFET is reduced. After the SiC MOSFET drain-source voltage does not change, a voltage control switch is turned off to avoid the SiC MOSFET false conduction caused by the crosstalk, so that the safeoperation of the SiC MOSFET is ensured.
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Description

technical field

[0001] The invention belongs to the technical field of power electronics drive, and more specifically relates to a drive circuit for a silicon carbide semiconductor field effect transistor. Background technique

[0002] SiC MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a silicon carbide metal-oxide semiconductor field effect transistor, which has the advantages of fast switching speed, low switching loss, good temperature performance, high withstand voltage level, and small size. The field of electronic converters has very good application prospects, and high frequency is the development trend of power electronic conversion technology, but due to the fast switching speed of SiC MOSFETs, it is easily affected by various parasitic parameters in high frequency applications, resulting in oscillation , Misleading and other phenomena. Therefore, in practical applications, corresponding driving circuits must be designed to ensure the safe and reliab...

Claims

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