Byte programming retry method for flash memory

Abstract

The present invention provides a byte programming method of a flash memory and a byte programming retry method thereof. The byte programming method performs multiple bytes of the memory in units of multiple bytes within the same timing cycle. The storage areas are programmed in turn, and then the reliability of the memory is verified. The programming retry method is to divide the standard time of byte programming into multiple segments with the same time interval, and perform the following steps in the same timing cycle: In the current time segment, multiple bytes of the memory are executed in units of multiple bytes The programming operation is performed in the memory area, and it is verified whether the programming operation is passed. If it is passed, the programming operation of the subsequent time period is not verified. Otherwise, in the next time period, the programming operation is repeatedly verified until the verification of all time periods is completed. The invention has the technical effects of shortening the programming time of memory reliability testing and improving testing efficiency.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a byte programming retry method of a flash memory. Background technique [0002] The memory is the memory device of the computer system, which is used to store programs and data. Memory is divided into volatile memory and non-volatile memory. Volatile memory loses its stored data immediately when the system is turned off; it requires a constant power supply to maintain the data. Nonvolatile memory retains data when the system is turned off or without power supply. For non-volatile memory, data storage reliability (Endurance Performance) is one of the parameters for evaluating memory performance. Therefore, before the memory leaves the factory, it is necessary to evaluate the performance of the memory through a reliability test. For the non-volatile memory is a flash memory (Flash Memory), the method of verifying the reliability of the flash memory usually adopts a...

AI Technical Summary

Problems solved by technology

It can be seen that the programming time is longer, which not only affects the reliability test time of the flash memory, but also affects the working speed of the flash memory.

The flash memory is a digital integrated circuit chip, and its programming is to perform a digital high-level signal 1 or a digital low-level signal 0 operation for the storage area, while the standard byte programming method performs a single byte programming operation. The programming depth is only applicable to the case of absolute 0, but not applicable to the non-absolute 0 flash memory of the mirror structure, that is, when the flash memory of the non-absolute 0 mirror structure is divided into high and low level signals based on 0.5V When it is lower than 0.5V, it is a low-level signal. At this time, the low-level signal is actually non-zero. At this time, the standard byte programming method thinks that the voltage above 0V is 1, which leads to the failure of the programming operation of the flash memory.

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