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N-pbte thermoelectric monomer with ni-mo alloy barrier layer and preparation method thereof

A potential barrier layer and thermoelectric technology, which is applied in the field of N-PbTe thermoelectric monomer and its preparation, can solve the problems of increasing contact resistance, affecting the electrical properties of devices, and easy oxidation of Ni, so as to inhibit high-temperature oxidation and improve resistance to The effect of high temperature creep performance

Active Publication Date: 2020-12-01
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

PbTe works at a high temperature (500°C) for a long time, and Ni is easily oxidized, which affects the integration quality and leads to an increase in contact resistance, which in turn affects the electrical properties of the device.

Method used

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  • N-pbte thermoelectric monomer with ni-mo alloy barrier layer and preparation method thereof
  • N-pbte thermoelectric monomer with ni-mo alloy barrier layer and preparation method thereof
  • N-pbte thermoelectric monomer with ni-mo alloy barrier layer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Select Φ5.5mm×18mm thermoelectric monomer N-PbTe, its PbI 2 The doping ratio of Mo is 0.04%wt, and the addition ratio of Mo is 3.5wt%. The method of composite electroplating is used to make the Ni-Mo alloy barrier layer of this monomer; the formula of the plating solution used is: 100g nickel sulfate, 150g molybdenum Ammonium acid, 12.5g magnesium sulfate, 7.5g sodium chloride, 450mL water; the electroplating process is: (1) Pulse electroplating, choose a rectangular waveform, the on-off ratio is 1:9, the current adjustment is 0.10A, and the electroplating time is 5min ; (2) Conduct DC electroplating, adjust the current to 0.1A, and electroplating time is 2min; (3) Conduct another pulse electroplating, the process and conditions are the same as the previous pulse electroplating.

Embodiment 2

[0022] Select Φ5.5mm×18mm thermoelectric monomer N-PbTe, its PbI 2 The doping ratio of Mo is 0.03%wt, and the addition ratio of Mo is 2wt%. The method of composite electroplating is used to make Ni-Mo alloy barrier layer for this monomer; the formula of plating solution used is: 103g nickel sulfate, 145g molybdic acid Ammonium, 12.8g magnesium sulfate, 7.2g sodium chloride, 450mL water; the electroplating process is: (1) pulse electroplating, choose a rectangular waveform, the on-off ratio is 1:9, the current adjustment is 0.15A, and the electroplating time is 10min; (2) Conduct direct current electroplating, adjust the current to 0.15A, and electroplating time is 4min; (3) Conduct another pulse electroplating, the process and conditions are the same as the previous pulse electroplating.

Embodiment 3

[0024] Select Φ5.5mm×18mm thermoelectric monomer N-PbTe, its PbI 2 The doping ratio of Mo is 0.05%wt, and the addition ratio of Mo is 5wt%. The method of composite electroplating is used to make the Ni-Mo alloy barrier layer of this monomer; the plating solution formula used is: 105g nickel sulfate, 140g molybdic acid Ammonium, 13g magnesium sulfate, 7.5g sodium chloride, 450mL water; the electroplating process is: (1) Pulse electroplating, choose a rectangular waveform, the on-off ratio is 1:9, the current adjustment is 0.2A, and the electroplating time is 15min; ( 2) Conduct direct current electroplating, adjust the current to 0.2A, and electroplating time is 6 minutes; (3) Conduct another pulse electroplating, the process and conditions are the same as the previous pulse electroplating.

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Abstract

The invention discloses a N-PbTe thermoelectric leg with Ni-Mo alloy potential barrier layers and a manufacturing method for the N-PbTe thermoelectric leg. The N-PbTe thermoelectric leg with the Ni-Moalloy potential barrier layers is characterized in that the two ends of the N-PbTe thermoelectric leg are compounded with the Ni-Mo alloy potential barrier layers which are 3[mu]m-7[mu]m thick, and mass content of Mo in the alloy is 8%-12%. The manufacturing method comprises the following steps: taking the N-PbTe thermoelectric leg as a base material, firstly performing pulse electroplating, selecting rectangular waveforms, enabling a break-make ratio to be 1 to 9, separately regulating current to be 0.005-0.015 A, and enabling electroplating time to be 5-15 minutes; performing direct-currentelectroplating, regulating current to be 0.1-0.2A, and enabling electroplating time to be 2-6 minutes; and finally performing once pulse electroplating, wherein the process and the conditions for once pulse electroplating are the same with those of last-time pulse electroplating. A little metal Mo is introduced into the barrier layers, so that high-temperature oxidization of interface potential barrier layers can be effectively inhibited, and contribution is made to improving high-temperature creep resistance of an element unit.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric power generation, and in particular relates to an N-PbTe thermoelectric monomer with a Ni-Mo alloy barrier layer and a preparation method thereof. Background technique [0002] N-PbTe thermoelectric material is an N-type medium-temperature thermoelectric material with excellent medium performance, which is mainly used to make thermo-electric conversion monomers of thermoelectric batteries (devices). Its energy conversion principle is: a loop composed of an N-type thermoelectric element and a P-type thermoelectric element, when the thermocouple has a temperature difference between the two joints, a current will be generated in the loop. [0003] According to the above working principle, there is an integrated interface between the monomer and the conductive electrode. If the interface barrier layer is not made on the end face of the thermoelectric cell, the monomer may be polluted during th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/56C25D5/18
CPCC25D3/562C25D5/18
Inventor 张丽丽任保国王泽深
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST