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A method for improving the stability of silver nanowire electrodes by atomic deposition of zinc oxide

A silver nanowire and atomic deposition technology, which is applied in the manufacture of circuits, electrical components, cables/conductors, etc., can solve the problems of high cost of silver nanowires, poor stability improvement effect, slow chemical reaction, etc., and achieves little damage to performance , low cost, sensitive chemical reaction

Active Publication Date: 2020-07-14
HARBIN INST OF TECH
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Problems solved by technology

[0006] The present invention will solve by atomic deposition TiO 2 To improve the stability of silver nanowire electrodes, there are technical problems of high cost, poor stability improvement effect, and relatively slow chemical reaction; and a method for atomically depositing zinc oxide to improve the stability of silver nanowire electrodes is provided

Method used

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Embodiment 1

[0025] Embodiment 1: In this embodiment, the raw material silver nanowires are prepared by the polyol method, specifically: at first, the following three solutions are prepared as a solvent with ethylene glycol: (A) 220.0mMNaBr, (B) 210.0mMNaCl, and ( C) 505.0mMPVP (56.0g / L, molecular weight is 130000). Then 7.7 mL of ethylene glycol, 0.1 mL of A solution, 0.2 mL of B solution, 1.0 mL of C solution, and 1.0 mL of freshly prepared 265.0 mM AgNO 3 The ethylene glycol solution was added to a 50mL round bottom flask, and the round bottom flask was placed in a magnetic oil bath device at room temperature. Stir without heating for 30 minutes to make the solution fully mixed, then stir for 15 minutes while heating to 170°C. During heating, nitrogen gas was bubbled through the solution. When the temperature of the solution reached 170°C, the flask was sealed, and the stirring was stopped to allow it to react for 1 h. After 1 h, the flask was taken out from the magnetic oil bath, an...

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Abstract

The invention discloses a method for improving the stability of a silver nanowire electrode through atomic deposition of zinc oxide, and belongs to the field of transparent electrodes. The invention aims to solve the technical problems that the cost is high, the stability improvement effect is poor and the chemical reaction is slow when the stability of a silver nanowire electrode is improved through atomic deposition of TiO2. The method comprises the following steps: 1, dispersing silver nanowires in absolute ethyl alcohol to obtain silver nanowire ink; 2, uniformly coating a PET substrate with the silver nanowire ink to obtain an ink thin layer, and performing heating by an infrared lamp until the solvent is completely volatilized; 3, performing low-temperature heat treatment; 4, takingdiethyl zinc (DMZ) and hydrogen peroxide as precursors, taking argon as purging gas flow, and carrying out atomic layer deposition on the substrate treated at step 3 to finish the preparation. According to the method, the electrode stability is obviously improved, the chemical reaction is sensitive, and the cost is relatively low.

Description

technical field [0001] The invention belongs to the field of transparent electrodes; in particular, it relates to a method for improving the stability of silver nanowire electrodes by using atomic deposition (ALD). Background technique [0002] Transparent electrodes are central components of many optoelectronic devices, such as light-emitting diodes, solar cells, touch screens, displays, and more. The traditional material for preparing transparent electrodes is generally indium tin oxide (ITO), but ITO has several shortcomings, such as few sources of materials and high cost; the methods of coating ITO on the substrate are generally evaporation, high-temperature spraying and magnetron sputtering However, these methods require high temperature conditions and waste energy; ITO is brittle in nature, poor in flexibility, and so on. Facing the wave of flexible electronics, a new generation of ITO substitutes is urgently needed. [0003] Several alternatives to ITO have been rep...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00
CPCH01B13/00H01B13/003
Inventor 何鹏张墅野徐成彦林铁松刘旭
Owner HARBIN INST OF TECH
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