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Preparation method and application of an ultra-clean interface heterojunction

A heterojunction and interface technology, applied in the field of ultra-clean interface heterojunction preparation, can solve the problems of difficult electron collection, flexibility and transparency, etc., and achieve high-efficiency charge collection, low cost and simple method Effect

Active Publication Date: 2020-04-03
PEKING UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the traditional electrode materials are gold, copper and other electrodes, which are difficult to be flexible and transparent, and the traditional acceptor materials such as titanium dioxide are difficult to effectively collect electrons in the absorber.

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  • Preparation method and application of an ultra-clean interface heterojunction
  • Preparation method and application of an ultra-clean interface heterojunction
  • Preparation method and application of an ultra-clean interface heterojunction

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Embodiment Construction

[0043] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0044] The invention provides a method for preparing an ultra-clean interface, using a clean transfer method without the aid of a high polymer to non-destructively transfer a subcentimeter-sized large single-crystal graphene film prepared by chemical vapor deposition to a porous substrate such as a transmission electron microscope microgrid , to prepare a com...

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Abstract

The invention provides a preparation method and application of an ultra-clean interface heterojunction. The preparation method of the heterojunction includes the following steps: first, a large-area single-crystal graphene film is grown by chemical vapor deposition, and then a non-polymer assisted The clean transfer method prepared suspended graphene on the transmission electron microscope grid, and finally used a one-step solution method to directly synthesize perovskite single crystals with a thickness of 5-100nm on the clean graphene surface to complete the ultra-clean interface heterojunction material preparation. This method completely avoids polymer contamination during the transfer process, and the heterojunction electron coupling is very good and the interface is very clean. At the same time, according to further characterization verification, graphene, as a two-dimensional electrode and acceptor material, can realize ultra-fast and high-efficiency carrier collection under an ultra-clean interface, and the heterojunction obtained by this method has an Photocurrent conversion efficiency, and the collection time scale of photogenerated carriers is on the order of hundreds of femtoseconds.

Description

technical field [0001] The invention relates to a preparation method of an ultra-clean interface, in particular to a preparation method and application of an ultra-clean interface heterojunction. Background technique [0002] With the continuous exploitation and utilization of fossil energy by human beings, and the accompanying increasingly serious environmental pollution problems, the human demand for solar energy is becoming increasingly urgent, and the effective use of solar energy has become the focus of attention. In recent years, new organic-inorganic perovskite solar cells have attracted widespread attention due to their excellent photoelectric properties, and have become a research hotspot in the field of solar cells. in CH 3 NH 3 PB 3 The photoelectric conversion efficiency of organometallic halides represented by perovskite crystal form has reached as high as 22%, surpassing that of polycrystalline silicon solar cells, and has a good application prospect. At th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48H01L51/42H01L51/44
CPCH10K71/60H10K30/10H10K30/81Y02E10/549
Inventor 洪浩张金灿刘开辉彭海琳
Owner PEKING UNIV
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