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Preparation method of silicon-doped lead zirconate titanate non-oriented film with high electrocaloric effect

An electrothermal effect and lead zirconate titanate technology, which is applied in the field of preparation of silicon-doped lead zirconate titanate non-oriented films, can solve the problems of lack of integrated circuits

Active Publication Date: 2021-04-20
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to solve the existing problem of lack of methods for cooling integrated circuits in the form of non-oriented films

Method used

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  • Preparation method of silicon-doped lead zirconate titanate non-oriented film with high electrocaloric effect
  • Preparation method of silicon-doped lead zirconate titanate non-oriented film with high electrocaloric effect
  • Preparation method of silicon-doped lead zirconate titanate non-oriented film with high electrocaloric effect

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specific Embodiment approach 1

[0020] Specific implementation mode one: refer to figure 1 Specifically explain this embodiment, the method for preparing a silicon-doped lead zirconate titanate non-oriented film with high electrothermal effect described in this embodiment, the method includes the following steps:

[0021] Step 1, dissolving lead acetate in glacial acetic acid solution and removing water by heating to obtain solution A, dissolving zirconium n-propoxide and tetrabutyl titanate in ethylene glycol monomethyl ether to obtain solution B;

[0022] Step 2. Mix solution A and solution B under stirring to form flocculent insolubles, add ionized water to the flocculent insolubles to dissolve the insolubles, and then heat to accelerate the reaction to form PbZr 1-x Ti x o 3 sol solution, the PbZr 1-x Ti x o 3 The sol solution is used as solution C; the ethanol solution of nano silicon dioxide particles is mixed with solution C to obtain solution D;

[0023] Step 3. Coating: Coat solution C or solu...

specific Embodiment approach 2

[0031] Specific embodiment 2: This embodiment is to further illustrate the preparation method of the silicon-doped lead zirconate titanate non-oriented film with high electrothermal effect described in specific embodiment 1. In this embodiment, the method also includes the performance Test steps:

[0032]Step 6. Measure the hysteresis loops of the thin film with platinum electrodes at different temperatures during the cooling process, obtain the polarization intensity under different electric fields according to the hysteresis loop curves and draw the curves with temperature, and obtain them through Maxwell's equations The curve of electrothermal performance changing with temperature.

specific Embodiment approach 3

[0033] Specific embodiment three: This embodiment is to further illustrate the preparation method of the silicon-doped lead zirconate titanate non-oriented film with high electrocaloric effect described in specific embodiment one. In this embodiment, in step two, in the Add deionized water to the flocculent insolubles to dissolve the insolubles, and then heat to accelerate the reaction to form PbZr 1-x Ti x o 3 The concrete process of sol solution is:

[0034] Add a total volume of 25%-30% deionized water to the flocculent insoluble matter, place the transparent solution after dissolving the insoluble matter in a drying oven at 110-120°C and continue heating for 0.5-2 hours or evaporate to reflux, Fully react the transparent solution and volatilize the intermediate by-products in the transparent solution, and finally form PbZr 1-x Ti x o 3 Sol solution.

[0035] In this embodiment, the function of fully reacting the transparent solution is to obtain a sol solution that d...

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Abstract

The invention discloses a preparation method of a silicon-doped lead zirconate titanate non-oriented thin film with high electrothermal effect, and relates to the field of refrigeration of microelectronic devices. The present invention aims to solve the problem of lack of methods for cooling integrated circuits in the form of non-oriented thin films. Dissolve lead acetate in glacial acetic acid solution and heat to remove water to obtain solution A; dissolve zirconium n-propoxide and tetrabutyl titanate in ethylene glycol monomethyl ether to obtain solution B; mix A and B to form flocculent insoluble matter, dissolve the insoluble matter, and then heat to obtain PbZr 1‑x Ti x o 3 Sol solution, as solution C; mix the ethanol solution of nano-silica particles and solution C to obtain solution D; apply C or D on the FTO substrate to form a wet film, and then bake to form a dry film, and the dry film is annealed to form A thin film; repeated coating to obtain a thin film with a thickness; a platinum electrode is grown on the upper surface of the film by a magnetron sputtering method to prepare a lead zirconate titanate non-oriented film. It is used to prepare thin films with high electrocaloric effect.

Description

technical field [0001] The invention relates to a method for preparing a silicon-doped lead zirconate titanate non-oriented film with high electrothermal effect. The invention belongs to the field of refrigeration of microelectronic devices. Background technique [0002] In recent years, with the development of science and technology, people have higher and higher requirements for mobile phones and other electronic products, hoping that they will become thinner and smaller. However, there are a large number of integrated circuits inside the electronic device, and a large amount of heat will be generated when the current passes through these circuits, which seriously threatens the performance and life of the electronic device. Therefore, most electronic products require an additional cooling device for cooling. At present, most equipment is refrigerated by compressing Freon and other fluorine-containing compounds to achieve gas-liquid conversion. However, Freon is a greenho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/491C04B35/622C04B41/88
CPCC04B35/491C04B35/62218C04B41/5111C04B41/88C04B41/4529
Inventor 姜桂铖王金鑫杨彬郑立梅刘丹青黄伟城曹文武
Owner HARBIN INST OF TECH
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