Field emission electrode and its preparation method
A field emission and electrode technology, which is applied in the manufacture of electrode systems, cold cathodes, discharge tubes/lamps, etc., can solve the problems of unsuitable large-area field emission electrode array preparation, immature controllable growth technology, growth Expensive and other issues, to achieve the effect of simple and mild growth conditions, enhanced emission performance, and improved emission performance
Active Publication Date: 2020-06-09
SHENZHEN INST OF ADVANCED TECH
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Problems solved by technology
[0004] At present, the nanowires in the field emission electrodes of field emission devices are mainly prepared and formed on the patterned electrode layer on the support plate by chemical vapor deposition. This method has harsh growth conditions, immature controllable growth technology, and Expensive, not suitable for the preparation of field emission electrode arrays with large areas
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[0029] In order to make the object, technical solution and advantages of the present invention clearer, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in and described with reference to the drawings are merely exemplary, and the invention is not limited to these embodiments.
[0030] This embodiment first provides a field emission electrode, such as figure 1 As shown, the field emission electrode 100 includes a substrate 10 and a metal electrode layer 20 formed on the substrate 10, the metal electrode layer 20 is provided with a plurality of indium pillars 30 arranged in an array, each A plurality of nanowires 40 are disposed on the top surface of the indium column 30 .
[0031] In the above electrode structure, on the bottom electrode (metal electrode layer ...
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Abstract
Disclosed is a field emission electrode, comprising a substrate and a metal electrode layer formed on the substrate, wherein the metal electrode layer is provided with multiple indium columns arranged in an array, with the top face of each indium column being provided with multiple nanowires. The preparation method for the field emission electrode comprises: S10, providing a substrate, and depositing and forming a metal electrode layer on the substrate; S20, preparing, on the metal electrode layer, a photoresist mask with a hole array; S30, depositing indium material on the photoresist mask, and stripping off the photoresist mask to obtain multiple indium columns arranged in an array; and S40, placing the prepared substrate with the indium columns in a reaction furnace to grow multiple nanowires on the top face of each indium column. The field emission electrode of the present invention has an excellent field emission performance, the preparation process therefor is simple, the nanowires can grow under low temperature and low pressure conditions, and the growth conditions are simple, mild and easy to control, thereby effectively improving the quality of the product and reducing the production cost.
Description
technical field [0001] The invention belongs to the technical field of field emission devices, in particular to a field emission electrode and a preparation method thereof. Background technique [0002] Nanomaterials refer to materials whose size is roughly in the range of 1 to 300nm. At this scale, it is easy to produce a series of effects such as surface effects, small size effects, quantum size effects, and macroscopic quantum tunneling effects. These effects make nanomaterials possess It has achieved special properties that macroscopic objects do not have, and thus shines in various fields such as: electrochemistry, sensors, field emission devices and other fields. [0003] Field emission devices are widely used as electron sources for microwave elements, sensors, flat panel display devices, etc., and emit electrons from cathode electrodes when an electric field is applied thereto in vacuum or a specific atmosphere. In a field emission device, by sharpening the tip of a...
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IPC IPC(8): H01J1/304H01J9/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01J1/3044H01J9/025
Inventor 张道书陈明洪序达冯叶钟国华李文杰杨春雷
Owner SHENZHEN INST OF ADVANCED TECH