Bipolar organic field effect transistor

Abstract

The invention relates to a bipolar organic field effect transistor. The bipolar organic field effect transistor comprises a substrate, a gate, a gate dielectric layer, an N-type active layer, a P-typeactive layer, a source and a drain, wherein the N-type active layer and the P-type active layer are arranged side by side in a cross mode among the source, the drain and gate dielectric layer to forma vertical laminated structure. The vertical laminated structure can make exciton dissociation at the interface between the N-type active layer and the P-type active layer sufficient so as to improvethe carrier mobility of electrons and holes in the organic bipolar field effect transistor. Therefore, the bipolar organic field effect transistor effectively improves the performances of the bipolarorganic field effect transistor.

Description

technical field [0001] The invention belongs to the technical field of solid electronic devices, in particular to a bipolar organic field effect transistor with a vertical stacked structure. Background technique [0002] A bipolar organic field effect transistor usually consists of a substrate, a gate, a gate dielectric layer, an N-type active layer, a P-type active layer, a source and a drain. Most of the N-type active layer and the P-type active layer are horizontally stacked, that is, the N-type active layer is located between the gate dielectric layer and the P-type active layer or the P-type active layer is located between the gate dielectric layer and the N-type active layer Among them, we call the bipolar organic field effect transistor with this structure a bipolar organic field effect transistor with a horizontal stacking structure. At the same time, most organic semiconductor materials belong to the single-carrier transport type, that is, their mobility for one ty...

AI Technical Summary

Problems solved by technology

In conventional bipolar organic field effect transistors, that is, bipolar organic field effect transistors with a horizontally stacked structure, the excitons at the interface between the N-type active layer and the P-type active layer are not sufficiently dissociated, and the electrons and holes are carried Flow carrier mobility is often too low

The existence of these shortcomings seriously hinders the commercial prospects of organic bipolar field effect transistors

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