AIN template, fabrication method thereof, light-emitting diode epitaxial wafer

Abstract

The invention discloses an AIN template, a fabrication method thereof and a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The method comprises the steps of providing a sapphire substrate; and depositing an AIN thin film on the sapphire substrate by a physical vapor deposition method, wherein the AIN thin film comprises a first AIN layer and a pluralityof composite layers, the plurality of composite layers are sequentially arranged on the first AIN layer in a lamination way, each composite layer comprises an AI layer and a second AIN layer, the AINlayer covers the Al layer, the AI layer in the composite near to the first AIN layer covers the first AIN layer. By the method, the AIN thin film with uniform thickness can be formed on the sapphiresubstrate, and the wavelength uniformity of the light-emitting diode epitaxial wafer is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an AlN template, a preparation method thereof, and a light-emitting diode epitaxial wafer. Background technique [0002] A GaN (gallium nitride)-based LED (Light Emitting Diode, light emitting diode) is a type of LED, and generally includes an epitaxial wafer and electrodes prepared on the epitaxial wafer. [0003] At present, most GaN-based LED epitaxial wafers are made of sapphire substrates. However, there are lattice mismatch and thermal mismatch problems between sapphire and GaN materials, and it is difficult to further improve the crystal quality of GaN epitaxial materials grown on sapphire substrates. After research, it was found that since there is only a small lattice mismatch between AlN (aluminum nitride) and GaN and sapphire substrates, AlN is placed between the sapphire substrate and GaN as a buffer layer. Based on this, the existing method for preparing GaN...

AI Technical Summary

Problems solved by technology

During the sputtering process, an AlN film will also be formed on the surface of the Al target, which will lead to uneven sputtering of Al atoms, thus forming an AlN film with uneven film thickness on the sapphire substrate.

In the process of growing GaN film by MOCVD method, due to the different temperature at the uneven thickness of the AlN film, the warpage of the epitaxial wafer is also different, which will eventually affect the wavelength uniformity of the epitaxial wafer

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