Nitrogen-hydrogen mixed plasma cleaning method suitable for substrate circuit

Abstract

The invention relates to a nitrogen-hydrogen mixed plasma cleaning method suitable for a substrate circuit. The specific method comprises the following steps of: (1) placing an integrated circuit substrate circuit to be cleaned in a plasma cleaning machine cleaning chamber, and closing a door of the cleaning chamber; (2) injecting the nitrogen-hydrogen mixture gas with a certain proportion; (3) setting parameters of the RF power, the cavity vacuum, and the cleaning time; and (4) starting a cleaning program to perform plasma cleaning, taking out the substrate circuit after the steps are finished, and closing the door of the cleaning chamber. The nitrogen-hydrogen mixed plasma cleaning method has the advantages in that: a chemical reagent is not used in the cleaning process so as to have little influence on operators and the environment; the cleaning process is performed in a vacuum environment, the process gas is little in consumption, and the cost is low; a clamp is configured to perform large-scale cleaning; the removal effect for the molecular dimension-level dirty mark is better than a method of plasma cleaning by employing the nitrogen-hydrogen mixed gas. The nitrogen-hydrogenmixed plasma cleaning method is suitable for surface cleaning prior to welding of thick-film substrate circuits such as alumina and beryllium oxide and thin-film substrate circuits.

Description

technical field [0001] The present invention relates to a processing method of a semiconductor device, in particular to a cleaning method of a substrate circuit. Background technique [0002] As we all know, plasma cleaning is one of the high-tech developed in recent years. The plasma cleaning method uses plasma to achieve the effect that conventional cleaning methods cannot achieve. [0003] In the production process of hybrid integrated circuits, the substrate circuit needs to be cleaned before assembly to remove surface stains and oxide layers on the metal surface of the soldering part to improve soldering reliability. Usually, argon gas is passed into the low-pressure chamber of the plasma cleaning machine, and the argon gas is ionized under the excitation of the radio frequency power supply to form a plasma-plasma mixture of activated argon atoms, free electrons and unreacted gas, and then bombarded to The surface of the substrate circuit to achieve the purpose of remo...

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to provide a nitrogen-hydrogen mixed plasma cleaning method suitable for substrate circuits to overcome the defects of long cleaning time and incomplete removal of oxides in the prior art

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