Drift detector and method for making the same

Abstract

The invention discloses a drifted detector and a production method thereof. The drifted detector comprises a first conductive semiconductor substrate, a tunneling oxide layer, a second conductive semiconductor layer, a third conductive semiconductor layer, a metal electrode layer and an isolating layer, wherein the conductive types of the second conductive semiconductor layer and the first conductive semiconductor substrate are opposite, the conductive types of the third conductive semiconductor layer and the first conductive semiconductor substrate are the same, the second conductive semiconductor layer, the portion, located under the second conductive semiconductor layer, of the tunneling oxide layer and the first conductive semiconductor substrate form a PN junction, and the PN junctionforms a shifted electrode, a first protective ring, an incidence window and a second protective ring; the third conductive semiconductor layer, the portion, located under the third conductive semiconductor layer, of the tunneling oxide layer and the first conductive semiconductor substrate form a high-low junction, and the high-low junction forms an anode, a first grounded electrode and a secondgrounded electrode. The shifted detector is large in size, low in noise and high in energy resolution, and has a simple production technology, so that large-batch production is feasible.

Description

technical field [0001] The disclosure belongs to the field of semiconductor detectors, and relates to a drift detector and a manufacturing method thereof, in particular to a drift detector with a passivation contact structure of a tunnel oxide layer and a manufacturing method thereof. Background technique [0002] With the rapid development of high-energy physics, nuclear physics technology, astrophysics, deep space exploration and aerospace, the detection and analysis of high-energy rays has become more and more important. How to quickly and accurately analyze the energy, position and quantity of high-energy rays or particles is the most critical issue faced by all related industries. At present, relatively mature high-energy ray detectors mainly include gas ionization chamber detectors, scintillator detectors, and semiconductor detectors. Among them, semiconductor detectors have attracted more and more attention because of their superior performance and very mature fabric...

AI Technical Summary

Problems solved by technology

Foreign companies such as Ketek and Pnsensor have launched drift detector products with large area and excellent performance, but they are expensive and have some technical barriers, and there are restrictions on the number of orders. They are widely used in deep space exploration and astrophysics research in my country. There are certain difficulties; and although several domestic research institutions and companies have also tried in this regard, they have not achieved good results

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