Drifted detector and production method thereof

Abstract

The invention discloses a drifted detector and a production method thereof. The drifted detector comprises a high-resistance N-type substrate, P-type semiconductor film, N-type semiconductor film, a metal electrode layer and an isolating layer, wherein the P-type semiconductor film and the high-resistance N-type substrate form a PN junction or a P-type dopant in the P-type semiconductor film diffuses into the N-type substrate to form a PN junction, and the PN junction forms a drifted electrode, a first protective ring, a second protective ring and an incidence window; the N-type semiconductorfilm and the high-resistance N-type substrate form a high-low junction or an N-type dopant in the N-type semiconductor film diffuses into the N-type substrate to form a high-low junction, and the high-low junction forms an anode, a first grounded electrode and a second grounded electrode; and the drifted detector further comprises second P-type semiconductor film used for forming a voltage divider. The shifted detector is large in size, low in noise and high in energy resolution, and has a simple production technology, so that large-batch production is feasible.

Description

technical field [0001] The disclosure belongs to the field of semiconductor detectors, and relates to a drift detector and a manufacturing method thereof. Background technique [0002] With the rapid development of high-energy physics, nuclear physics technology, astrophysics, deep space exploration and aerospace, the detection and analysis of high-energy rays has become more and more important. How to quickly and accurately analyze the energy, position and quantity of high-energy rays or particles is the most critical issue faced by all related industries. At present, relatively mature high-energy ray detectors mainly include gas ionization chamber detectors, scintillator detectors, and semiconductor detectors. Among them, semiconductor detectors have attracted more and more attention because of their superior performance and very mature fabrication technology. [0003] The earliest and most mature application of semiconductor detectors is the silicon-based PIN detector, ...

AI Technical Summary

Problems solved by technology

Foreign companies such as Ketek and Pnsensor have launched drift detector products with large area and excellent performance, but they are expensive and have some technical barriers, and there are restrictions on the number of orders. They are widely used in deep space exploration and astrophysics research in my country. There are certain difficulties; and although several domestic research institutions and companies have also tried in this regard, they have not achieved good results

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