Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A silicon tetrafluoride rectification device and its production method

A technology of silicon tetrafluoride and crude silicon tetrafluoride, which is applied in the field of silicon tetrafluoride rectification devices, can solve problems such as complicated production methods, restrictions on the development of electronic technology, and low specifications, so as to achieve good cold preservation effect and avoid cracking Explosion, the effect of reducing the cost of cold insulation

Active Publication Date: 2020-11-17
ZHEJIANG ZHONGNING SILICON IND
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are only a few countries capable of producing high-purity electronic gases above 5N, and high-purity gases are widely used in electronic products, aerospace, high-efficiency solar cells, and military industries. The preparation technology of silicon tetrafluoride is not yet perfect. The method is complex and difficult to master, and the products produced cannot fully meet the needs of related electronic products. The quality is poor and there are many problems, and it can only be used to manufacture low-standard products. This situation seriously restricts the development of electronic technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A silicon tetrafluoride rectification device and its production method
  • A silicon tetrafluoride rectification device and its production method
  • A silicon tetrafluoride rectification device and its production method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0032] Such as Figure 1-Figure 3 As shown, the present invention discloses a silicon tetrafluoride rectification device, in a specific embodiment of the invention, comprising a raw material storage tank 1, a compressor 2, a first heat exchanger for storing crude silicon tetrafluoride raw materials 3. The second heat exchanger 4, the light removal tower 5, the weight removal tower 6 and the finished product buffer tank 7, the raw material storage tank...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a silicon tetrafluoride rectifying device. The device comprises a raw material storage tank for storing crude silicon tetrafluoride raw materials, a compressor, a first heat exchanger, a second heat exchanger, a light removal tower, a heavy removal tower and a finished product buffer tank; the raw material storage tank is connected with the input end of the compressor through a raw material conveying pipe; the output end of the compressor is connected with the input end of the first heat exchanger through a compression conveying pipe; the output end of the first heat exchanger is connected with the input end of the second heat exchanger through a first heat exchange conveying pipe; the output end of the second heat exchanger is connected with the side wall of the light removal tower through a second heat exchange conveying pipe; the bottom of the light removal tower is connected with the side wall of the heavy removal tower through a connecting conveying pipe;the top of the heavy removal tower is connected with a finished product buffer tank through a discharging pipe; a light removal condenser is arranged at the upper part of the interior of the light removal tower; a heavy removal condenser is arranged at the upper part of the interior of the light removal tower; and an exhaust pipe is connected to the top of the light removal tower. The invention provides the silicon tetrafluoride rectifying device with high rectification purity, good impurity removal effect and high raw material utilization rate and a production method by the rectifying device.

Description

technical field [0001] The invention relates to a silicon tetrafluoride rectification device and a production method thereof. Background technique [0002] At present, microelectronics technology is the main cornerstone of modern information technology and military technology, and one of the key factors to promote scientific and technological progress, industrial development, economic take-off and social advancement. Integrated circuit is the core of microelectronics technology, and its development level and industrial scale have become an important symbol to measure a country's economic strength. Electronic specialty gases (such as silicon tetrafluoride), especially high-purity electronic gases as a new category of electronic chemical materials, are important factors restricting the reliability and yield of integrated circuits. With the rapid development of electronic information technology, the degree of integration is getting higher and higher, and the purity requirement...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
Inventor 郑安雄王矿宾闫静伟
Owner ZHEJIANG ZHONGNING SILICON IND
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products