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Method for cutting silicon ingot, method for manufacturing silicon wafer, and silicon wafer

A cutting method and technology for silicon wafers, applied in manufacturing tools, semiconductor/solid-state device manufacturing, fine working devices, etc., can solve the problems of slow processing speed, difficult removal operations, and time required for removal operations, and achieve pollution suppression. Effect

Pending Publication Date: 2019-05-03
SUMCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when cutting such a large-diameter silicon ingot with a free-grain wire saw, there are problems caused by the use of slurry
For example, since slurry adheres to wafers obtained by dicing, the slurry is removed in the subsequent cleaning process, but the removal of the slurry takes time
In addition, the slurry supplied during processing scatters and adheres to the wire saw device or its surroundings, and it is difficult to remove the attached slurry.
In addition, in the free abrasive wire saw, the slicing process is performed by the grinding action of the abrasive grains contained in the slurry, so the processing speed is slower than that of the conventional inner peripheral sharpening stone.

Method used

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  • Method for cutting silicon ingot, method for manufacturing silicon wafer, and silicon wafer
  • Method for cutting silicon ingot, method for manufacturing silicon wafer, and silicon wafer
  • Method for cutting silicon ingot, method for manufacturing silicon wafer, and silicon wafer

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Embodiment

[0077] Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to the following examples.

[0078]

[0079] A single crystal silicon ingot with a diameter of 450 mm (dopant: boron) was grown by the CZ method, and cut with a fixed abrasive wire saw to obtain 100 silicon wafers with a thickness of 1065 μm. At this time, as the fixed abrasive wire, the surface of the piano wire was plated with brass, and the diamond with an average particle diameter of 7 μm was used as the abrasive grain, and the wire was fixed on the surface of the piano wire by Ni electrodeposition. . Moreover, the average linear speed of the fixed abrasive wire rod was 712 m / min, and the cutting time was 10 hours.

[0080] The cutting time is 15 hours when the average diameter of the abrasive grains is 10 μm and 13 μm, and the average linear speed of the fixed abrasive wire is 950 m / min, 1188 m / min, 1425 m / min, 1663 m / min, and 1900 m / mi...

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Abstract

Proposed is a method for suppressing contamination by nickel to less than the detection limit when cutting a silicon ingot having a diameter exceeding 300 mm using a fixed abrasive wire saw. A methodfor feeding a silicon ingot having a diameter exceeding 300 mm so as to press the silicon ingot against at least one fixed abrasive wire saw in which a plurality of abrasive grains are fixed onto thesurface of a wire while running the fixed abrasive wire saw, and cutting the silicon ingot, wherein the method is characterized in that the cutting of the silicon ingot is performed in a cutting timeof 30 hours or less.

Description

technical field [0001] The invention relates to a silicon ingot cutting method, a silicon wafer manufacturing method and the silicon wafer. Background technique [0002] A wire saw spirally winds a wire at regular intervals with respect to a plurality of rollers to form a wire row, runs the wire while supplying slurry, presses workpieces such as silicon ingots onto the wire row, and slices the workpiece cutting device. Wire saws are widely used in the process of slicing silicon ingots to produce silicon wafers, since multiple wafers can be cut out from a workpiece at the same time. [0003] figure 1 It is a schematic diagram of the main part of a general jigsaw. The wire saw 10 shown in this figure includes a wire drawing / coiling mechanism (not shown) for drawing or winding a wire 20 , main rollers 30 arranged in parallel at predetermined intervals, and a mechanism for supplying coolant to the main rollers 30 . The nozzle 40 and the nozzle 50 for supplying the slurry to ...

Claims

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Application Information

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IPC IPC(8): H01L21/304B24B27/06B28D5/04
CPCB24B27/06B28D5/04H01L21/304
Inventor 桥本大辅田尻知朗又川敏中岛亮卫藤义博
Owner SUMCO CORP
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