Method for cutting silicon ingot, method for manufacturing silicon wafer, and silicon wafer
A cutting method and technology for silicon wafers, applied in manufacturing tools, semiconductor/solid-state device manufacturing, fine working devices, etc., can solve the problems of slow processing speed, difficult removal operations, and time required for removal operations, and achieve pollution suppression. Effect
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[0077] Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to the following examples.
[0078]
[0079] A single crystal silicon ingot with a diameter of 450 mm (dopant: boron) was grown by the CZ method, and cut with a fixed abrasive wire saw to obtain 100 silicon wafers with a thickness of 1065 μm. At this time, as the fixed abrasive wire, the surface of the piano wire was plated with brass, and the diamond with an average particle diameter of 7 μm was used as the abrasive grain, and the wire was fixed on the surface of the piano wire by Ni electrodeposition. . Moreover, the average linear speed of the fixed abrasive wire rod was 712 m / min, and the cutting time was 10 hours.
[0080] The cutting time is 15 hours when the average diameter of the abrasive grains is 10 μm and 13 μm, and the average linear speed of the fixed abrasive wire is 950 m / min, 1188 m / min, 1425 m / min, 1663 m / min, and 1900 m / mi...
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