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VCSEL (Vertical cavity Surface Emitting Laser) epitaxial structure and preparation method thereof

A technology of vertical cavity surface emission and epitaxial structure, applied in the field of lasers, can solve the problems of large threshold current of VCSEL

Active Publication Date: 2019-05-07
YANGZHOU CHANGELIGHT
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  • Abstract
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Problems solved by technology

[0003] At present, the VCSEL epitaxial structure mainly obtains higher reflectivity by abrupt DBR, stacked DBR, linear DBR, etc. However, the threshold current of the existing VCSEL is relatively large

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  • VCSEL (Vertical cavity Surface Emitting Laser) epitaxial structure and preparation method thereof
  • VCSEL (Vertical cavity Surface Emitting Laser) epitaxial structure and preparation method thereof
  • VCSEL (Vertical cavity Surface Emitting Laser) epitaxial structure and preparation method thereof

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Embodiment Construction

[0055] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0056] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0057] As mentioned in the back...

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Abstract

The invention discloses a VCSEL epitaxial structure and a preparation method thereof. An N type DBR layer is composed of AlYGa1-YAs in which the Al content is different, barrier junctions between different AlYGa1-YAs layers are reduced, stress change between the adjacent AlYGa1-YAs layers is used to increase the barrier height, so that the total depth of the barrier junction of the N type DBR layer is reduced, the serial resistance of the N type DBR layer is reduced, the voltage between the two ends of the N type DBR layer is reduced, the threshold current of the DBR layer is reduced, and current consumed in the N type DBR layer is reduced, and further heat loss of the epitaxial structure is reduced, and the power conversion efficiency and gradient efficiency of the epitaxial structure areimproved. Steps are formed between the AlYGa1-YAs in different Al content, the barrier difference is reduced, electrons are easier to transit, the electron and cavity complex logarithm is increased,the number of counter rotating particles is increased, and the gain is improved.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to an epitaxial structure of a vertical cavity surface emitting laser and a preparation method thereof. Background technique [0002] Vertical cavity surface emitting laser (Vertical Cavity Surface Emitting Laser, referred to as VCSEL) is a semiconductor laser that emits laser light perpendicular to the substrate surface. It has the characteristics of small size, long life, high efficiency, output circular spot, and single longitudinal mode. It is widely used in many fields such as optical fiber communication, optical storage and laser printing. VCSEL generally consists of a substrate, an active region, a distributed Bragg reflector (Distributed Bragg Reflection, referred to as DBR) and a metal coating. The mirror surface of the N-type DBR and the mirror surface of the P-type DBR form the resonant cavity of the VCSEL. [0003] At present, the VCSEL epitaxial structure mainly obtains...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/187H01S5/34
Inventor 田宇韩效亚吴真龙杜石磊
Owner YANGZHOU CHANGELIGHT
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