Method for preparing carbon nanotube array by using solution catalyst
A carbon nanotube array, catalyst technology, applied in chemical instruments and methods, inorganic chemistry, carbon compounds, etc., can solve the problems of low yield, high cost, difficult application, etc., and achieve the effect of simple process, low cost, and easy operation
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Embodiment 1
[0023] A smooth silicon chip substrate is provided, and the surface flatness is less than 300 nanometers, so that the subsequent carbon nanotube growth catalyst layer can be evenly attached to the surface of the substrate.
[0024] A catalyst layer is formed on the surface of the smooth substrate, and the catalyst layer is uniformly coated on the surface of the substrate by a solution spin coating method, and then dried. The solution adopts ferric chloride aqueous solution, and its concentration is 0.8mol / L. The solution was dropped on the center of the substrate and then spin-coated with a coater at a rotation speed of 1000r / min for 1 minute. After spreading evenly, dry the substrate on a drying table at 200 degrees Celsius.
[0025] Put the silicon wafer substrate formed with the catalyst layer into the reaction chamber, pass the reaction gas into the reaction chamber, and use the plasma chemical vapor deposition method to grow the carbon nanotube array on the surface of th...
Embodiment 2
[0029] A smooth silicon chip substrate is provided, and the surface flatness is less than 300 nanometers, so that the subsequent carbon nanotube growth catalyst layer can be evenly attached to the surface of the substrate.
[0030] A catalyst layer is formed on the surface of the smooth substrate, and the catalyst layer is uniformly coated on the surface of the substrate by a solution spin coating method, and then dried. The solution adopts ferric chloride aqueous solution, and its concentration is 1.2mol / L. The solution was dropped on the center of the substrate and then spin-coated with a coater at a rotation speed of 1000r / min for 1 minute. After spreading evenly, dry the substrate on a drying table at 200 degrees Celsius.
[0031] Put the silicon wafer substrate formed with the catalyst layer into the reaction chamber, pass the reaction gas into the reaction chamber, and use the plasma chemical vapor deposition method to grow the carbon nanotube array on the surface of th...
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