Check patentability & draft patents in minutes with Patsnap Eureka AI!

Method for preparing carbon nanotube array by using solution catalyst

A carbon nanotube array, catalyst technology, applied in chemical instruments and methods, inorganic chemistry, carbon compounds, etc., can solve the problems of low yield, high cost, difficult application, etc., and achieve the effect of simple process, low cost, and easy operation

Inactive Publication Date: 2019-05-10
杭州英希捷科技有限责任公司
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But these preparation methods mainly have the following disadvantages: (1) yield is low, not suitable for industrial production; (2) cost is high; (3) growth direction is not easy to control, it is difficult to apply in industry
Most of the liquid catalysts are ferrocene, the liquid catalysts are easy to sublimate and volatilize, and it is difficult to stay on the surface of the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing carbon nanotube array by using solution catalyst
  • Method for preparing carbon nanotube array by using solution catalyst
  • Method for preparing carbon nanotube array by using solution catalyst

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A smooth silicon chip substrate is provided, and the surface flatness is less than 300 nanometers, so that the subsequent carbon nanotube growth catalyst layer can be evenly attached to the surface of the substrate.

[0024] A catalyst layer is formed on the surface of the smooth substrate, and the catalyst layer is uniformly coated on the surface of the substrate by a solution spin coating method, and then dried. The solution adopts ferric chloride aqueous solution, and its concentration is 0.8mol / L. The solution was dropped on the center of the substrate and then spin-coated with a coater at a rotation speed of 1000r / min for 1 minute. After spreading evenly, dry the substrate on a drying table at 200 degrees Celsius.

[0025] Put the silicon wafer substrate formed with the catalyst layer into the reaction chamber, pass the reaction gas into the reaction chamber, and use the plasma chemical vapor deposition method to grow the carbon nanotube array on the surface of th...

Embodiment 2

[0029] A smooth silicon chip substrate is provided, and the surface flatness is less than 300 nanometers, so that the subsequent carbon nanotube growth catalyst layer can be evenly attached to the surface of the substrate.

[0030] A catalyst layer is formed on the surface of the smooth substrate, and the catalyst layer is uniformly coated on the surface of the substrate by a solution spin coating method, and then dried. The solution adopts ferric chloride aqueous solution, and its concentration is 1.2mol / L. The solution was dropped on the center of the substrate and then spin-coated with a coater at a rotation speed of 1000r / min for 1 minute. After spreading evenly, dry the substrate on a drying table at 200 degrees Celsius.

[0031] Put the silicon wafer substrate formed with the catalyst layer into the reaction chamber, pass the reaction gas into the reaction chamber, and use the plasma chemical vapor deposition method to grow the carbon nanotube array on the surface of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a carbon nanotube array by using a solution catalyst. The method includes putting a smooth substrate into a plasma generator to preform hydrophilic treatment on the surface of the smooth substrate by plasma; after the substrate is taken out, dripping the prepared catalyst solution on the surface, and then using a spin coater for spin coating evenly; and finally, after drying, putting the substrate into a reaction cavity, introducing reaction gas, and adopting a chemical vapor deposition method to grow the carbon nanotube array from the substrate under a certain temperature condition. The carbon nanotube array prepared by the method has clean and smooth surface, high surface density, simple process and very low preparation cost, and is suitablefor industrial mass production.

Description

technical field [0001] The invention relates to a method for preparing arrayed carbon nanotubes, in particular to a method for preparing carbon nanotube arrays using a solution spin coating method as a catalyst. Background technique [0002] Due to the unique electrical and thermal properties of carbon nanotubes, they have broad application prospects in the fields of nano-integrated circuits and single-molecule devices. At present, the method of preparing carbon nanotubes in the laboratory is relatively mature, and the synthesis of large-area carbon nanotube arrays has also made great progress. However, in the large-scale industrial production that requires low cost, the current preparation methods are still insufficient. [0003] At present, the main methods for preparing carbon nanotubes mainly include arc discharge method, pulsed laser evaporation method and chemical vapor deposition method. However, these preparation methods mainly have the following disadvantages: (1)...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B32/162
Inventor 汪小知张亮吴永志
Owner 杭州英希捷科技有限责任公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More