Preparation process of polyimide silicon tab material
A polyimide silicon, preparation process technology, applied in structural parts, electrical components, battery pack components and other directions, can solve problems such as poor electrical conductivity of tabs, improve electrical conductivity, improve interface compatibility performance, The effect of improving the battery rate
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[0042] A preparation process of a polyimide silicon tab material, specifically comprising the following steps:
[0043] Preparation of honeycomb porous polyimide;
[0044] Silicon, silicon oxide, and lithium compounds are mixed into mixed powder;
[0045] Filling the mixed powder into honeycomb porous polyimide by plasma gas phase method to obtain deposition material;
[0046] The deposition material is prepared by carbon deposition to obtain the negative electrode material.
[0047] Such as figure 1 Shown is the scanning image of the prepared honeycomb polyimide, and the mixed powder is filled into the honeycomb porous polyimide by the plasma gas phase method to obtain the deposition material, specifically as image 3 shown. Such as figure 2 Shown is the integrated lug scan.
[0048] In the above embodiment, the copper foil is replaced by polyimide, which improves the compatibility between the copper interface and the interface of the negative electrode material; since...
Embodiment 1
[0070] A preparation process of a polyimide silicon tab material, specifically comprising the following steps:
[0071] (1) prepare honeycomb porous polyimide;
[0072] S1-1: Dissolving under nitrogen protection with pyromellitic dianhydride, 4,4'-diaminodiphenyl ether, dimethylacetamide, N-methyl-2 pyrrolidone, and fluorine compounds as raw materials;
[0073] S1-2: Stir and reflux the solution obtained in the step S1-1 under nitrogen protection for 2h;
[0074] S1-3: The solution refluxed through the step S1-2 is prepared into a film of 25 μm by injection-calendering, and dried at 40° C.;
[0075] S1-4: The film dried in step S1-3 is subjected to graphitization treatment at a treatment temperature of 2500° C. and kept for 5 hours.
[0076] (2) silicon, silicon oxide, and lithium compounds are mixed into mixed powder;
[0077] Take 20 parts of high-purity silicon, 80 parts of silicon oxide, and 2 parts of lithium compound, and put them in a ball mill for 10 hours, and the ...
Embodiment 2
[0085] A preparation process of a polyimide silicon tab material, specifically comprising the following steps:
[0086] (1) prepare honeycomb porous polyimide;
[0087] S1-1: Dissolving under nitrogen protection with pyromellitic dianhydride, 4,4'-diaminodiphenyl ether, dimethylacetamide, N-methyl-2 pyrrolidone, and fluorine compounds as raw materials;
[0088] S1-2: Stir and reflux the solution obtained in the step S1-1 under nitrogen protection for 10 h;
[0089] S1-3: The solution refluxed through the step S1-2 is prepared into a film of 2100 μm by injection-calendering, and dried at 80° C.;
[0090] S1-4: The film dried in the step S1-3 is subjected to graphitization treatment at a treatment temperature of 3000° C. and kept for 10 hours.
[0091] (2) silicon, silicon oxide, and lithium compounds are mixed into mixed powder;
[0092] Take 40 parts of high-purity silicon, 30 parts of silicon oxide, and 10 parts of lithium compound, and put them in a ball mill for 10 hours...
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