Silicon-on-insulator radio frequency switch device and manufacturing method thereof
A silicon-on-insulator and radio-frequency switch technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve the problems of parasitic NPN potential rise, inability to derive PW everywhere in time, and easy breakdown of MOSFETs, etc., to achieve improved Breakdown voltage, suppression of floating body effect, effect of reducing positive charge collection
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[0030] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0031] Please refer to Figure 4 , the invention provides a method for manufacturing a silicon-on-insulator radio frequency switching device, comprising:
[0032] S11: providing a substrate;
[0033] S12: sequentially forming a first oxide layer, a first single crystal silicon layer, a second oxide layer, a second single crystal silicon layer, a third oxide layer and a mask layer on the substrate;
[0034] S13: sequentially etching the mask layer, the third oxide layer, the second single crystal silicon layer,...
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