Graphene-semiconductor heterojunction-based bit sensitive photoelectric detector

Abstract

The invention discloses a graphene-semiconductor heterojunction-based bit sensitive photoelectric detector. The detector structure sequentially comprises a metal back electrode 1, a semiconductor layer 2 and a hole insulation layer 3 from bottom to top, wherein a graphene layer 4 covers a hole of the hole insulation layer 3, an edge of the graphene layer 4 extends out of the hole of the hole insulation layer 3 an is laid on an upper surface of the hole insulation layer 3, a metal counter electrode in a horizontal X-axis direction and a metal counter electrode in a vertical Y-axis direction arearranged on an upper surface of the graphene layer 4 laid on the upper surface of the hole insulation layer 3, and a plasmon metal nanometer structure 6 is modified on the upper surface of the graphene layer 4 covering the hole of the hole insulation layer 6. The bit sensitive photoelectric detector proposed by the invention has the characteristics of rapid response speed and high position detection sensitivity and has a good application prospect in the field of photoelectric signal detection, and a weak optical signal can be detected.

Description

technical field [0001] The invention relates to a position-sensitive photodetector based on graphene-semiconductor heterojunction, belonging to the field of photoelectric detection. technical background [0002] As a device that converts optical signals into electrical signals, photodetectors have been used in many fields such as spectral detection, imaging, and monitoring. Photodetectors based on the vertical photovoltaic effect or photoconductive effect can be combined with other optical elements to detect the wavelength, intensity, and polarization phase information of incident light. The photodetection based on the transverse photovoltaic effect can realize the position-sensitive photodetection, because it can accurately measure the relative physical variables such as the position distance and the offset angle, and the position-sensitive photodetector based on the transverse photoelectric effect is widely used in optical engineering. , aerospace and military fields. At...

AI Technical Summary

Problems solved by technology

[0006] Technical problem: The object of the present invention is to provide a position-sensitive photodetector based on a graphene-semiconductor heterojunction. The local field enhancement and light trapping effect of the plasmon structure in the position-sensitive photodetector enhances the The light absorption in the depletion layer formed by the ene-semiconductor heterojunction increases the photoelectric responsivity, thereby enhancing the sensitivity of position detection, and also improves the minimum optical signal intensity that the device can detect. In addition, it can also improve the detector It overcomes the shortcomings of low photoelectric responsivity, difficulty in detecting weak light signals, and slow response time of existing position sensitive detectors.

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