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Photodetector and its preparation method

A technology of photodetector and photoelectric conversion layer, which is applied in the field of optoelectronics, can solve the problems of low photoelectric conversion efficiency, low absorption efficiency, narrow light absorption wavelength range, etc., achieve good dark current suppression effect, high charge carrier concentration, Effect of increasing photon absorption intensity

Active Publication Date: 2022-05-10
SHENZHEN UNIV
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  • Description
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  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide a photodetector and its preparation method, aiming to solve the problems of narrow light absorption wavelength range and low absorption efficiency of existing photodetectors to a certain extent, resulting in low photoelectric conversion efficiency

Method used

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  • Photodetector and its preparation method
  • Photodetector and its preparation method

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preparation example Construction

[0037] The second aspect of the embodiment of the present application provides a method for preparing a photodetector, comprising the following steps:

[0038] S10. Obtain a P-type substrate layer, prepare a non-conductive dielectric material on the surface of the P-type substrate layer, and obtain a non-conductive dielectric layer;

[0039] S20. Arranging a graphene film on the surface of the non-conductive medium layer away from the P-type substrate layer to obtain a photogenerated carrier receiving layer;

[0040] S30. Deposit oxygen-poor titanium dioxide or copper-doped titanium dioxide on the surface of the photogenerated carrier receiving layer away from the non-conductive medium layer to obtain a photoelectric conversion layer;

[0041] S40. Arranging a metal electrode layer at opposite ends of the photoelectric conversion layer, and the metal electrode layer is arranged in contact with the photogenerated carrier receiving layer to form a photodetector.

[0042] The pr...

Embodiment 1

[0060] A photodetector comprising the following preparation steps:

[0061] 1. Under the condition of 700-1000°C, oxidize the surface of the silicon substrate layer to form a silicon dioxide layer with a thickness of 80 nanometers, and the thickness of the silicon substrate layer is 1.5 microns.

[0062] 2. Prepare a graphene film, etch it into a graphene strip with a width less than 50 nanometers, and transfer it to the surface of silicon dioxide. The thickness of the graphene film is 5 nanometers.

[0063] 3. The oxygen-poor titanium dioxide prepared by the chemical vapor phase method with a molar ratio of titanium and oxygen of 1:1.875 was vapor-deposited on the surface of the graphene film by vacuum electron beam evaporation to obtain an oxygen-poor titanium dioxide with an oxygen vacancy content of 6.25%. Oxy-titanium dioxide layer, deposited with a thickness of 10nm.

[0064] 4. Vacuum annealing at 350°C.

[0065] 5. Etch the electrode potential, install metal drain-so...

Embodiment 2

[0067] A photodetector comprising the following preparation steps:

[0068] 1. Under the condition of 700-1000°C, oxidize the surface of the silicon substrate layer to form a silicon dioxide layer with a thickness of 80 nanometers, and the thickness of the silicon substrate layer is 1.5 microns.

[0069] 2. Prepare a graphene film, etch it into a graphene strip with a width less than 50 nanometers, and transfer it to the surface of silicon dioxide. The thickness of the graphene film is 5 nanometers.

[0070] 3. Evaporate a titanium dioxide material with a copper-doped percentage of 8% on the surface of the graphene film to obtain a copper-doped titanium dioxide layer with a deposition thickness of 10 nm.

[0071] 4. Vacuum annealing at 350°C.

[0072] 5. Etch the electrode potential, install metal drain-source electrodes, and make a field effect tube.

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Abstract

The present application belongs to the field of optoelectronic technology, and in particular relates to a photodetector, which includes a P-type substrate layer, a non-conductive medium layer, a photogenerated carrier receiving layer, and a photoelectric conversion layer arranged in sequence, and is arranged on Metal electrode layers at opposite ends of the photoelectric conversion layer, and the metal electrode layer is arranged in contact with the photogenerated carrier receiving layer; the photogenerated carrier receiving layer includes graphene, and the photoelectric conversion layer includes oxygen-poor titanium dioxide Or titanium dioxide doped with copper. The photodetector of the present application, through the oxygen-poor titanium dioxide or copper-doped titanium dioxide in the photoelectric conversion layer, not only can better reduce the dark current caused by the desorption effect on the surface of graphene, but also increase the field effect tube response area and improve Responsivity and detection sensitivity of photodetectors in the visible range.

Description

technical field [0001] The present application belongs to the technical field of optoelectronics, and in particular relates to a photodetector and a preparation method of the photodetector. Background technique [0002] Photodetectors are widely used in spectral analysis, imaging, infrared night vision, communication and other fields. Spectral bandwidth and dark current are important indicators to measure the performance of the detector, and the spectral bandwidth is determined by the bandgap width of the semiconductor material and the carrier mobility rate. [0003] Graphene photodetectors are typical devices that directly use graphene as a photoelectric response material. Because graphene has a zero band gap and a high ion migration rate, it can reach 2×10 5 cm 2 / V·s, the maximum response bandwidth of this type of device can reach 40GHz. However, the graphene surface with O 2 or H 2 The desorption of O, etc. causes the device to generate obvious dark current, and the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0336H01L31/109H01L31/18
CPCH01L31/109H01L31/0336H01L31/18Y02P70/50
Inventor 钱正芳林俏露王任衡孙一翎范姝婷
Owner SHENZHEN UNIV
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