Check patentability & draft patents in minutes with Patsnap Eureka AI!

Photoelectric detector and preparation method thereof

A photodetector and photoelectric conversion layer technology, applied in the field of optoelectronics, can solve the problems of narrow light absorption wavelength range, low absorption efficiency, low photoelectric conversion efficiency, etc., and achieves improved photon absorption intensity, high charge carrier concentration, good Effect of Dark Current Suppression Effect

Active Publication Date: 2020-11-17
SHENZHEN UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of this application is to provide a photodetector and its preparation method, aiming to solve the problems of narrow light absorption wavelength range and low absorption efficiency of existing photodetectors to a certain extent, resulting in low photoelectric conversion efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric detector and preparation method thereof
  • Photoelectric detector and preparation method thereof
  • Photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] The second aspect of the embodiment of the present application provides a method for preparing a photodetector, comprising the following steps:

[0038] S10. Obtain a P-type substrate layer, prepare a non-conductive dielectric material on the surface of the P-type substrate layer, and obtain a non-conductive dielectric layer;

[0039] S20. Arranging a graphene film on the surface of the non-conductive medium layer away from the P-type substrate layer to obtain a photogenerated carrier receiving layer;

[0040] S30. Deposit oxygen-poor titanium dioxide or copper-doped titanium dioxide on the surface of the photogenerated carrier receiving layer away from the non-conductive medium layer to obtain a photoelectric conversion layer;

[0041] S40. Arranging a metal electrode layer at opposite ends of the photoelectric conversion layer, and the metal electrode layer is arranged in contact with the photogenerated carrier receiving layer to form a photodetector.

[0042] The pr...

Embodiment 1

[0060] A photodetector comprising the following preparation steps:

[0061] 1. Under the condition of 700-1000°C, oxidize the surface of the silicon substrate layer to form a silicon dioxide layer with a thickness of 80 nanometers, and the thickness of the silicon substrate layer is 1.5 microns.

[0062] 2. Prepare a graphene film, etch it into a graphene strip with a width less than 50 nanometers, and transfer it to the surface of silicon dioxide. The thickness of the graphene film is 5 nanometers.

[0063] 3. The oxygen-poor titanium dioxide prepared by the chemical vapor phase method with a molar ratio of titanium and oxygen of 1:1.875 was vapor-deposited on the surface of the graphene film by vacuum electron beam evaporation to obtain an oxygen-poor titanium dioxide with an oxygen vacancy content of 6.25%. Oxy-titanium dioxide layer, deposited with a thickness of 10nm.

[0064] 4. Vacuum annealing at 350°C.

[0065] 5. Etch the electrode potential, install metal drain-so...

Embodiment 2

[0067] A photodetector comprising the following preparation steps:

[0068] 1. Under the condition of 700-1000°C, oxidize the surface of the silicon substrate layer to form a silicon dioxide layer with a thickness of 80 nanometers, and the thickness of the silicon substrate layer is 1.5 microns.

[0069] 2. Prepare a graphene film, etch it into a graphene strip with a width less than 50 nanometers, and transfer it to the surface of silicon dioxide. The thickness of the graphene film is 5 nanometers.

[0070] 3. Evaporate a titanium dioxide material with a copper-doped percentage of 8% on the surface of the graphene film to obtain a copper-doped titanium dioxide layer with a deposition thickness of 10 nm.

[0071] 4. Vacuum annealing at 350°C.

[0072] 5. Etch the electrode potential, install metal drain-source electrodes, and make a field effect tube.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of photoelectrons, and particularly relates to a photoelectric detector, which comprises a P-type substrate layer, a non-conductive dielectric layer, a photon-generated carrier receiving layer and a photoelectric conversion layer which are sequentially laminated, and metal electrode layers arranged at two opposite ends of the photoelectric conversion layer, the metal electrode layer and the photon-generated carrier receiving layer are arranged in a contact manner; the photon-generated carrier receiving layer comprises graphene, and the photoelectricconversion layer comprises oxygen-poor titanium dioxide or copper-doped titanium dioxide. According to the photoelectric detector, through oxygen-poor titanium dioxide or copper-doped titanium dioxide in the photoelectric conversion layer, dark current generated by a desorption effect on the surface of graphene can be better reduced, the response area of the field effect transistor can be increased, and the responsivity and the detection sensitivity of the photoelectric detector in a visible light range are improved.

Description

technical field [0001] The present application belongs to the technical field of optoelectronics, and in particular relates to a photodetector and a preparation method of the photodetector. Background technique [0002] Photodetectors are widely used in spectral analysis, imaging, infrared night vision, communication and other fields. Spectral bandwidth and dark current are important indicators to measure the performance of the detector, and the spectral bandwidth is determined by the bandgap width of the semiconductor material and the carrier mobility rate. [0003] Graphene photodetectors are typical devices that directly use graphene as a photoelectric response material. Because graphene has a zero band gap and a high ion migration rate, it can reach 2×10 5 cm 2 / V·s, the maximum response bandwidth of this type of device can reach 40GHz. However, the graphene surface with O 2 or H 2 The desorption of O, etc. causes the device to generate obvious dark current, and the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0336H01L31/109H01L31/18
CPCH01L31/109H01L31/0336H01L31/18Y02P70/50
Inventor 钱正芳林俏露王任衡孙一翎范姝婷
Owner SHENZHEN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com