Preparation method of 3D printing negative photoresist for high-precision semiconductor
A negative photoresist and semiconductor technology, which is applied in the field of preparation of 3D printing negative photoresist for high-precision semiconductors, can solve the problem of unsuitable shape and structure of substrates, inability to print and coat smoothly, and photoresist sticking To solve problems such as large degree of precision, achieve the effect of line edge roughness and sensitivity improvement, reduce influence, and increase simplicity
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Embodiment 1
[0045] To prepare 3D printing negative photoresist for high-precision semiconductors, the method is as follows:
[0046] a, 1 part of Ce(NO 3 ) 3 Add 20 parts of methyl orthosilicate to 1000 parts of pure water and stir well, then add 30 parts of aluminum chloride and 5 parts of magnesium chloride and stir well, then add 10 parts of dodecyl dimethyl benzyl bromide Ammonium chloride and fully stirred evenly, heated to 100°C and kept warm for 2 hours, stopped the reaction and discharged, filtered the reaction liquid and fully washed, and then fully dried the filter cake at 60°C to obtain the quaternary ammonium salt organo-modified silicon magnesium aluminum acid;
[0047] b. Add 100 parts of methanol, 1 part of quaternary ammonium salt organically modified magnesium aluminum silicate prepared in step a and 0.5 part of azobisisoheptanonitrile into the reaction kettle, raise the temperature to 70°C, and then add 100 parts of vinyl acetate The ester and 1 part of azobisisobutyr...
Embodiment 2
[0051] To prepare 3D printing negative photoresist for high-precision semiconductors, the method is as follows:
[0052] a. Add 2 copies of Ce 2 (SO 4 ) 3 , 3 copies of Dy(NO 3 ) 3 , 25 parts of ethyl orthosilicate, 25 parts of γ-aminopropyltriethoxysilane are added to 1000 parts of pure water and fully stirred evenly, then 30 parts of aluminum sulfate, 30 parts of aluminum nitrate, 10 parts of magnesium sulfate, 5 parts of magnesium nitrate and stir well, then add 15 parts of cetyl dimethyl benzyl ammonium chloride and 15 parts of octadecyl dimethyl benzyl ammonium bromide and stir well, then heat up to 150°C And keep the reaction for 4 hours, stop the reaction and discharge the material, filter the reaction solution and fully wash it, and then fully dry the filter cake at 90°C to obtain the quaternary ammonium salt organically modified magnesium aluminum silicate;
[0053] b. Add 50 parts of propanol, 50 parts of n-butanol, 5 parts of quaternary ammonium salt organicall...
Embodiment 3
[0057] To prepare 3D printing negative photoresist for high-precision semiconductors, the method is as follows:
[0058] a. Mix 1 part of CeCl 3 , 0.5 Dy 2 (SO 4 ) 3 , 1 part of DyCl 3, 10 parts of methyltriethoxysilane, 10 parts of vinyltriethoxysilane, and 15 parts of γ-(2,3-epoxypropoxy)propyltrimethoxysilane were added to 1000 parts of pure water and fully Stir well, then add 10 parts of aluminum chloride, 15 parts of aluminum sulfate, 10 parts of aluminum nitrate, 2 parts of magnesium chloride, 2 parts of magnesium sulfate, 2 parts of magnesium nitrate and stir well, then add 5 parts of dodecyl dimethyl Benzyl ammonium chloride, 5 parts of hexadecyl dimethyl benzyl ammonium bromide, 5 parts of octadecyl dimethyl benzyl ammonium chloride and stir well, then raise the temperature to 110°C and keep it warm for 3 hours, Stop the reaction and discharge the material, filter the reaction solution and fully wash it, and then fully dry the filter cake at 70°C to obtain a quat...
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