Chemically amplified positive photoresist composition and pattern forming method using same
A technology of photoresist and composition, which is applied in the directions of optics, optomechanical equipment, photosensitive material processing, etc., can solve the problem of insufficient film thickness of the composition, and achieve excellent plane uniformity, high sensitivity, and high resolution Effect
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Embodiment 1 to 18
[0071] Chemical radioactivity was prepared by selecting a polymer, an acid generator, a basic compound, and a surfactant as a base resin according to the formulation shown in Table 1, dissolving them in an organic solvent, and filtering through a membrane with a pore size of 0.05 μm. Large positive photoresist composition. The chemically amplified positive photoresist composition was spin-coated on an 8-inch silicon wafer (Mark-8, Tokyo Electron Ltd.), and pre-baked at 150 ° C for 180 seconds to remove the solvent, forming a film thickness of 9 μm chemically amplified positive photoresist film. The results of the crack resistance test are shown in Table 2.
[0072] A film thickness of 7.5 μm was formed by dispensing the chemically amplified positive photoresist composition onto an 8-inch silicon wafer (Mark-8, Tokyo Electron Ltd.) and prebaking at 150 °C for 180 s to remove the solvent photoresist film. Using a KrF stepper FPA 3000-EX5 (Canon Inc.), the photoresist film was...
Embodiment 19 to 24 and comparative example 10
[0077] Chemicals were prepared by selecting polymers as base resins, acid generators, basic compounds, and surfactants according to the formulation shown in Table 1, dissolving them in organic solvents, and filtering through membranes with a pore size of 0.05 μm. Amplified positive photoresist composition. The viscosity of the composition was adjusted to 98 mPa·s at 25°C. The chemically amplified positive photoresist composition was spin-coated on an 8-inch silicon wafer (Mark-8, Tokyo Electron Ltd.) at 1000 rpm, and prebaked at 150 °C for 180 seconds to remove the solvent and form a chemical Amplified positive photoresist film. The film thickness was measured by using a spectroscopic film thickness measurement system VM-1210 (Screen Semiconductor Solutions Co., Ltd.). The results are shown in Table 3.
Embodiment 25 and comparative example 11
[0079] The photoresist was formed by dispensing the chemically amplified positive photoresist composition onto an 8-inch silicon wafer (Mark-8, Tokyo Electron Ltd.) and prebaking at 150 °C for 180 s to remove the solvent membrane.
[0080] The film thickness was measured by using VM-1210 (Screen Semiconductor Solutions Co., Ltd.). Using a KrF stepper FPA 3000-EX5 (Canon Inc.), a 7.5 μm photoresist film was exposed to KrF rays through a reticle. The exposed silicon wafer was left to stand in a clean room (25° C., 50% RH) for 1 minute and 30 minutes. The 7.5 μm photoresist film was baked (PEB) at 110° C. for 180 seconds and developed with 2.38 wt % tetramethylammonium hydroxide in water (AZ300 MIF developer). The observation of the pattern profile and the measurement of the line and space dimensions of the pattern were carried out under SEM.
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[0084] Lutonal M40: Polyvinyl methyl ether Mw 50,000 (BASF)
[0085] Mowital B16H: Polyvinyl buty...
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