Gradient photoetching layout and semiconductor surface manufacturing method thereof

Abstract

The invention discloses a gradient photoetching layout and a semiconductor surface manufacturing method thereof. The gradient photoetching layout adopts a black-white layout and forms an array of completely opaque areas and an array of completely non-opaque areas, the completely opaque areas and the completely non-opaque areas are alternately arranged on the surface of the layout in a staggered manner, and the gradient photoetching layout has proportional gradient characteristics and completely staggered characteristics; the method comprises the following steps: processing the surface of an original semiconductor through photoetching and etching, coating the semiconductor with a layer of photoresist, carrying out a conventional photoetching process by adopting a gradient photoetching layout to form a mask with a pattern, and etching micro-pits on the surface of the semiconductor through dry etching. According to the method, the gradient photoetching layout constructed by special designis utilized, the gradient micro-pit array on the surface of the semiconductor and the long-distance gentle slope formed on the basis of the micro-pit array are realized, the process steps are semiconductor processing technologies, and the low-cost and high-yield manufacturing of the long-distance gentle slope on the surface of the semiconductor can be realized.

Description

technical field [0001] The disclosure of the invention relates to the field of surface topography processing of semiconductors, and in particular relates to a gradient photolithography layout, a method for manufacturing gradual micropits on a semiconductor surface, and a method for manufacturing long-distance gentle slopes on a semiconductor surface. Background technique [0002] With the development of power electronics technology, semiconductor devices have been more and more widely used. The physical and chemical properties of some new semiconductors are more stable than silicon, and it is difficult to form long-distance gentle slopes on the surface by traditional methods, and the slopes are usually one of the key structures for forming semiconductor devices. Taking silicon carbide semiconductor as an example, its wide band gap and high thermal conductivity make it a better choice for high voltage and high current applications. Since the terminal area of ​​high-voltage p...

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Problems solved by technology

[0005] 1) The activation energy of boron is about 40% higher than that of aluminum, and there are deep energy levels (D centers) and abnormal diffusion problems after implantation;

[0006] 2) Multi-round processes will double the process time and cost, including mask growth, photolithography, ion implantation, etc., and the practicability is low;

[0007] 3) Carbon film conversion is not a conventional process. The conversion process and final morphology depend on the chemical composition of the photoresist, the terminal morphology and implantation energy are limited, and the device will experience additional thermal processes

On the other hand, due to the very stable physical and chemical properties of silicon carbide, it is difficult to form such long-distance gentle slopes in the manufacturing process of power electronic devices by conventional methods. Manufacturing method of long-distance gentle slope

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