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Method and device for preparing copper indium gallium selenide thin film battery

A thin film battery, copper indium gallium selenide technology, applied in circuits, electrical components, final product manufacturing, etc., can solve the problem that CIGS films cannot have high-quality band gaps at the same time, the ratio of four elements is prone to fluctuations, and the conversion of selenium elements It can solve the problem of high rate and high concentration, and achieve the effect of solving the difficulty of concentration debugging, improving the utilization rate and improving the uniformity of film formation.

Pending Publication Date: 2019-05-28
上海祖强能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the technical problem to be solved in the present invention is to overcome the low utilization rate of selenium element in the CIGS film preparation process in the prior art, the four element ratios are prone to fluctuations, and the CIGS film cannot have high-quality band gap and selenium at the same time. These two advantages of high element conversion rate and other defects, thus providing a preparation method for copper indium gallium selenide thin film battery

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  • Method and device for preparing copper indium gallium selenide thin film battery

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Embodiment 1

[0059] This embodiment provides a method for preparing a copper indium gallium selenide solar thin film, specifically as follows:

[0060] In the CIGS coating chamber, soda-lime glass is used as the substrate, and it is installed on the transmission device. The transmission device is set above the chamber, and a heating source is installed above the glass substrate. Arrange gallium evaporation source, indium evaporation source, copper evaporation source, copper evaporation source, gallium evaporation source, indium evaporation source from left to right. Set at the bottom of the chamber and on both sides of the sputtering device, the heating power of the gallium evaporation source is 900w, the heating power of the copper evaporation source is 2500w, the heating power of the indium evaporation source is 900w, and the deposition rate of gallium is 2A / S; The deposition rate of elements is 3A / S; the deposition rate of indium is 2A / S; the selenium target is set in the middle of the ...

Embodiment 2

[0062] This embodiment provides a method for preparing a copper indium gallium selenide solar thin film, specifically as follows:

[0063] In the CIGS coating chamber, quartz glass is used as the substrate and installed on the transmission device. The transmission device is set above the chamber, and the heating source is set above the glass substrate. The temperature is 600 ° C. Gallium evaporation source, indium evaporation source, copper evaporation source, copper evaporation source, gallium evaporation source, indium evaporation source, gallium evaporation source, indium evaporation source are arranged in order from left to right. The distance between the evaporation sources is 50cm, and the distance from the substrate The evaporation source is set at the bottom of the chamber and on both sides of the sputtering device. The heating power of the gallium evaporation source is 1000w, the heating power of the copper evaporation source is 3000w, and the heating power of the indi...

Embodiment 3

[0065] This embodiment provides a method for preparing a copper indium gallium selenide solar thin film, specifically as follows:

[0066] In the CIGS coating chamber, borosilicate glass is used as the substrate and installed on the transmission device. The transmission device is set above the chamber, and the heating source is set above the glass substrate. The temperature is 600 ° C. The transmission device starts to drive at a speed of 15cm / min. The chamber is arranged in turn from left to right with gallium evaporation source, indium evaporation source, copper evaporation source, copper evaporation source, gallium evaporation source, indium evaporation source, the distance between the evaporation sources is 40cm, and the distance from the substrate is 1.4m. The sources are respectively set at the bottom of the chamber and on both sides of the sputtering device. The heating power of the gallium evaporation source is 800w, the heating power of the copper evaporation source is...

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Abstract

The invention belongs to the technical field of coating, and particularly relates to a method and a device for preparing a copper indium gallium selenide (CIGS) thin film battery. The preparation method comprises the following steps: carrying out evaporation coating on a substrate by taking three elements of copper, indium and gallium as evaporation sources, and carrying out magnetron sputtering on the substrate by taking a selenium target material as a magnetron sputtering target to obtain a coated substrate; and carrying out annealing treatment on the coated substrate to obtainthe CIGS solarthin film. According to the preparation method, the CIGS thin film is prepared by combining a co-evaporation method and magnetron sputtering. The CIGS thin film has a good longitudinal gradient of forbidden band width, the utilization rate of the selenium element can be increased, the problems that the element ratio in the CIGS thin film is prone to fluctuation and the concentration of the selenium element is difficult to debug are solved, and magnetron sputtering is beneficial to improving the film forming uniformity.

Description

technical field [0001] The invention belongs to the technical field of coating, and in particular relates to a method and a device for preparing a copper indium gallium selenium thin film battery. Background technique [0002] With the rapid growth of world energy demand, traditional petrochemical energy is increasingly unable to meet our energy demand. Solar energy has become one of the most potential new energy sources due to its advantages of cleanliness and pollution-free. At the same time, solar cells have entered a golden age of rapid development. [0003] Solar cells are photoelectric devices that directly convert solar energy into electrical energy. Copper indium gallium selenide thin-film cells (CIGS) have the advantages of less manufacturing processes, relatively low cost, stable performance, strong radiation resistance, and high photoelectric conversion efficiency. One of the research hotspots of batteries. [0004] The core material of CIGS is the CIGS film lay...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/18C23C14/06C23C14/14C23C14/24C23C14/35C23C14/58
CPCY02P70/50
Inventor 徐义岳志远
Owner 上海祖强能源有限公司
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