Electron spin structure of low-dimensional semiconductor materials

Abstract

The invention discloses an electron spin structure p-type CuAlO2 of a low-dimensional semiconductor material. In order to further explore and clarify the magnetic origin of a magnetic semiconductor material, the magnetic properties of a TM element Co and Ni-doped CuAl02 are researched. A CuAl02 material with a cuprous iron structure is selected for research, since the CuAl02 material is one of fewnatural p-type semiconductor materials, the p-type or n-type conductivity can be achieved by doping, and therefore, the material is closer to the actual application.

Description

technical field [0001] The invention relates to the field of semiconductors, and relates to an electron spin structure of a low-dimensional semiconductor material. Background technique [0002] Since the theory of T. Dietl et al. predicted that overplated metal (Transition Metal, TM) element Mn-doped ZnO, GaN and other semiconductor materials have ferromagnetism (Ferromagnetism, FM) up to room temperature (Room Temperature, RT), and have a single Since the successful preparation of layered graphene and VS2, these low-dimensional materials have gained systematic attention because of their promising application prospects in high-density non-volatile storage, spintronic devices, nanotransistors, and supercapacitors. Research. Although it has been reported that a variety of doped oxide and nitride semiconductor materials have FM of RT, there is still a considerable distance between these magnetic oxide and nitride semiconductor materials and practicality, and its key scientific...

AI Technical Summary

Problems solved by technology

Although it has been reported that a variety of doped oxide and nitride semiconductor materials have FM of RT, there is still a considerable distance between these magnetic oxide and nitride semiconductor materials and practicality, and its key scientific issues