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Preparation method of TFT, ink for preparing TFT and preparation method thereof

A technology of ink and gate insulating layer, applied in the preparation of TFT ink and its preparation, and the field of TFT preparation, can solve the problems of low efficiency, single TFT functional layer of ink, cumbersome process, etc., and achieve high efficiency and mixing process conditions The effect of easy control and simple process steps

Active Publication Date: 2020-11-06
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the embodiments of the present invention is to overcome the above-mentioned deficiencies in the prior art, and provide an ink for preparing TFT and a preparation method thereof, so as to solve the technical problem that the ink for preparing TFT by the solution method can only form a single TFT functional layer
[0007] Another object of the present invention is to provide a preparation method of TFT to solve the technical problems of cumbersome and low efficiency in the existing method for forming TFT

Method used

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  • Preparation method of TFT, ink for preparing TFT and preparation method thereof
  • Preparation method of TFT, ink for preparing TFT and preparation method thereof

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preparation example Construction

[0046] On the other hand, the embodiment of the present invention provides a preparation method of the above-mentioned ink for preparing TFT. The preparation method of the ink that is used to prepare TFT comprises the steps:

[0047] S01: Measure each component according to the components and content contained in the ink used to prepare TFT;

[0048] S02: Mixing the measured active layer material source components, stabilizer, and organic solvent to prepare an active layer ink;

[0049] S03: dissolving the measured gate insulating layer material in water to prepare gate insulating layer ink;

[0050] S04: Mixing the active layer ink and the gate insulating layer ink.

[0051] Wherein, the ink used for preparing TFT in the above step S01 is the ink used for preparing TFT described above. Therefore, the ink includes the components and contents of the active layer material source components, gate insulating layer materials, stabilizers, organic solvents and water as described ...

Embodiment 11

[0069] Embodiment 11 provides an ink for preparing TFT and a preparation method thereof. The ink comprises the following components by weight:

[0070] Active layer material source components: 3 parts of gallium chloride, 2 parts of indium chloride, 2 parts of zinc acetate dihydrate;

[0071] 7 parts of PVA, 6 parts of monoethanolamine, 100 parts of ethylene glycol methyl ether, and 100 parts of water.

[0072] Described ink preparation method comprises the steps:

[0073] S11: Mixing the gallium chloride, indium chloride, zinc acetate dihydrate and other active layer material source components, monoethanolamine, and ethylene glycol methyl ether to prepare an IGZO layer ink;

[0074] S12: Dissolving PVA in water to prepare PVA ink;

[0075] S13: Mixing the IGZO layer ink and the PVA ink.

Embodiment 12

[0077] Embodiment 12 provides an ink for preparing TFT and a preparation method thereof. The ink comprises the following components by weight:

[0078] Active layer material source components: 10 parts of gallium nitrate, 15 parts of indium nitrate;

[0079] 15 parts of PVA, 30 parts of diethanolamine, 100 parts of ethylene glycol butyl ether, and 300 parts of water.

[0080] Described ink preparation method comprises the steps:

[0081] S11: performing mixing treatment on active layer material source components such as gallium nitrate and indium nitrate, diethanolamine, and ethylene glycol butyl ether, and preparing IGZO layer ink;

[0082] S12: Dissolving PVA in water to prepare PVA ink;

[0083] S13: Mixing the IGZO layer ink and the PVA ink.

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Abstract

The invention discloses an ink for preparing a TFT, a preparation method thereof and a method for preparing the TFT. The components for preparing ink of the TFT comprise the following components including, by weight, an active layer material source component, a gate insulating layer material, a stabilizer, an organic solvent, and water. The method for preparing the TFT of the present invention comprises the steps of forming a coating on a substrate provided with a gate electrode by using the ink for preparing the TFT, performing annealing treatment, and forming an insulation layer and an active layer which are stacked and combined in order on the substrate with the gate electrode. The ink of the invention can be annealed after one coating treatment, the gate insulating layer and the activelayer can be formed, and therefore, the preparation process of the TFT is effectively simplified.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a preparation method of TFT, an ink used for preparing TFT and a preparation method thereof. Background technique [0002] Displays have become an indispensable part of people's daily work and life. With the development of liquid crystal displays and the deepening of the concept of active matrix, TFT (Thin Film Transistor, Thin Film Field Effect Transistor) technology has been extensively studied. In LCD (Liquid Crystal Display) or OLED (Organic Light Emitting Diode) displays, each pixel is driven by a TFT (Thin Film Transistor, Thin Film Field Effect Transistor) integrated behind the pixel, so that high speed, high Bright, high-contrast display screen information. [0003] At present, relatively mature TFT technologies include silicon-based thin film transistors represented by hydrogenated amorphous silicon (a-Si:H TFT) and polysilicon (p-Si TFT) thin film transist...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/40C09D7/61C09D11/30C09D129/04C08K3/16C08K3/28C08K5/098
Inventor 辛征航向超宇李乐张滔张东华邓天旸
Owner TCL CORPORATION