SiC MOSFETE open-loop active driving circuit

Abstract

The invention relates to a SiC MOSFETE open-loop active driving circuit, and belongs to the technical field of circuit control. The circuit comprises a traditional driving circuit and an auxiliary circuit, the auxiliary circuit comprises a di / dt detection circuit and a shunting circuit, the di / dt detection circuit is used to determine ON and OFF states of a SiC MOSFETE, and transmits the signal obtained by determining to the shunting circuit, and the shunting circuit is used to shunt gate current of the SiC MOSFET via the signal of the di / dt detection circuit. According to the provided SiC MOSFETE open-loop active driving circuit, the shunting circuit and the di / dt detection circuit are added to the traditional SiC MOSFET driving circuit, the ON / OFF delay time is shortened, the switching loss is reduced, the active driving circuit is of open-loop operation, and the system cost and complexity are reduced.

Description

technical field [0001] The invention belongs to the technical field of circuit control, in particular to a SiC MOSFET open-loop active drive circuit. Background technique [0002] High power density, high efficiency and high reliability are the current development trends of power electronics technology. As a wide bandgap semiconductor device, SiC MOSFET has the characteristics of fast switching speed, low total loss, high breakdown voltage and high thermal conductivity. It has been widely used in the fields of new energy, motor drive, hybrid and electric vehicle controllers, etc. Applications. [0003] While SiC MOSFETs have several advantages, they create many problems when switching at high speeds. On the one hand, the di / dt of SiC MOSFET high-speed switching, through the parasitic inductance of the circuit, generates overvoltage and overcurrent, causing electromagnetic interference; on the other hand, overvoltage and overcurrent require higher device margins, resulting ...

AI Technical Summary

Problems solved by technology

The multi-level control method controls the switching speed by changing the driving voltage at different stages, and uses multiple driving power supplies in series or a resistor divider network to generate the required driving voltage. However, this method has complex circuits and low efficiency of the driving power supply. Generates large driver stage losses

The multi-driving resistance control method controls the switching speed by changing the driving resistance value in different stages, and switches the resistance to control the switching speed in the delay stage, current rising stage and Miller plateau stage. Each parallel branch contains a bidirectional switch, but due to The switching process of SiC MOSFET is short, and a faster driving circuit needs to be added for bidirectional switching

In addition, the multi-drive resistor control method generally uses CPLD / FPGA closed-loop control, which increases the cost and complexity of the system

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