GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the technical field of semiconductors. The gallium nitride-based light-emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer, and the P-type semiconductor layer are sequentially stacked on On the substrate; the N-type semiconductor layer is a Si-doped GaN layer; at least one composite layer is inserted in the N-type semiconductor layer, and the composite layer includes a first sub-layer, a second sub-layer stacked in sequence layer and a third sublayer; the first sublayer is a Mg-doped GaN layer, the second sublayer is an undoped AlGaN layer, and the third sublayer is a Ge-doped GaN layer. The invention can effectively promote the lateral expansion of electrons, make the electrons evenly distributed in the N-type semiconductor layer, and improve the antistatic ability of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. LED has attracted widespread attention due to its advantages of energy saving, environmental protection, high reliability, and long service life. Since civil lighting focuses on energy saving and service life of products, it is particularly critical to reduce the series resistance of LEDs and improve the antistatic ability of LEDs. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-t...

AI Technical Summary

Problems solved by technology

[0008] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and its manufacturing method, which can solve the problem that many defects in the N-type semiconductor layer in the prior art will affect the expansion of electrons

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