Multi-wire cutting method of silicon carbide crystal bars

Abstract

The invention discloses a multi-wire cutting method of silicon carbide crystal bars. The multi-wire cutting method of the silicon carbide crystal bars comprises the steps that the end faces of the silicon carbide crystal bars are subjected to stress state detection, and tensile stress type end faces with tensile stress are selected; annular companion pieces are pasted on the tensile stress type end faces; the silicon carbide crystal bars pasted with the annular companion pieces are subjected to multi-wire cutting, and crystal plates pasted with the annular companion pieces become end face crystal plates; and the annular companion pieces and the end face crystal plates are separated. According to the multi-wire cutting method of the silicon carbide crystal bars, the quality and the yield ofthe end face crystal plates of the silicon carbide crystal bars are improved, and the processing cost of silicon carbide crystal plates is reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor material processing, and in particular relates to a method for multi-wire cutting of silicon carbide crystal rods. Background technique [0002] With the rapid development of semiconductor technology and optoelectronic technology, the demand for silicon carbide wafers is increasing year by year. The main manufacturing process of silicon carbide wafers is: crystal growth—cutting (slicing)—grinding—polishing. Among them, the cutting process is one of the key processes in the silicon carbide wafer manufacturing process. The quality of cutting processing directly affects the quality of subsequent processing. [0003] Among wafers obtained in the dicing process, wafer warp (Warp) is an important index for evaluating wafer deformation. Wafer warpage usually refers to the distance between the highest point and the lowest point of the middle surface of the wafer under the influence of no external force. I...

AI Technical Summary

Problems solved by technology

[0004] However, in the silicon carbide wafers cut by the existing multi-wire cutting method, the wafer warpage of the head and tail wafers (end wafers) does not meet the requirements.

Moreover, the larger the size of the silicon carbide wafer, the more serious the warpage of the head and tail wafers does not meet the requirements.

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