Sputtering method

Abstract

To provide a sputtering method as a reactive sputtering method of forming a thin film by allowing a target material to react with a gas, in which film deposition conditions are narrowed down from an existing period of nitrogen radicals by focusing on a nitriding process in thin-film forming processes when the thin film is formed by pulsing a waveform of electric current from a DC power supply at the time of generating plasma and applying the electric current to the target material.

Description

Technical field [0001] The present disclosure relates to a sputtering method for forming a thin film on a substrate such as a semiconductor wafer or glass, and particularly relates to a technique of forming a dense nitride amorphous film in the sputtering method. Background technique [0002] In recent years, in the field of equipment in industrial fields such as semiconductor equipment and electronic components, technologies related to the long-term performance stability of equipment, that is, reliability improvement, have received special attention. As a background, there are high-functionality of control circuits and safety circuits that accompany the hybridization of automobiles; and the diversification of sensors and control components that accompany the automated driving of automobiles. In addition, the same trend has been observed in industrial robots such as welding machines, and more highly reliable electronic components are required. [0003] In the field of equipment, c...

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Problems solved by technology

However, in either method, the protective properties of silicon nitride cannot be obtained, and the film thickness is often increased to deal with it. The load on the equipment due to the film stress and the long time of the film formation time are brought to bear. cost increase and so on become a problem

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