GaN base vertical integration photoelectron chip and preparation method thereof
An optoelectronic chip, one-sided technology, applied in circuits, electrical components, electro-solid devices, etc., can solve the problems of the same horizontal structure, the inability to further improve the integration density of GaN integrated optoelectronics, and the inability to achieve optimal performance. The effect of miniaturized integration, reduced difficulty and cost
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[0037] The present invention also provides a method for preparing a GaN-based vertically integrated optoelectronic chip, comprising the following steps:
[0038] Step 1, growing a GaN epitaxial layer on the substrate;
[0039] Step 2, growing an n-GaN layer on the GaN epitaxial layer;
[0040] Step 3, growing an InGaN / GaN layer on the n-GaN layer;
[0041] Step 4, performing photolithography and etching after the InGaN / GaN layer in step 3 is spin-coated with photoresist;
[0042] Step 5, growing a p-GaN layer on the InGaN / GaN layer to complete the preparation of the multi-quantum well LED structure;
[0043] Step 6. Repeat steps 1 to 5 to obtain a multi-quantum well PD structure;
[0044] Step 7, polishing and thinning the sides of the above two substrates on which the devices are not grown, and then bonding them together;
[0045] Step 8: Evaporate metal electrodes on the multi-quantum well LED structure and the multi-quantum well PD structure respectively, and then wire-...
Embodiment 1
[0072] (1) Clean the sapphire substrate (No. 1) and dry it with nitrogen.
[0073] (2) Using the MOCVD method, first grow a GaN epitaxial layer on a sapphire substrate, then grow an n-GaN layer on the GaN epitaxial layer, and then grow an InGaN / GaN layer (also called an MQWs layer) on the n-GaN layer.
[0074] (3) Coat the photoresist on the InGaN / GaN layer for photolithography development. During the exposure process, a customized mask will be used, and the graphic area on the mask will be completely placed above the wafer, and an exposure time of 7s will be set. , through the exposure technology, the pattern on the designed mask plate is transferred to the photoresist layer. The exposed device needs to be developed to make the graphics appear. Development mainly uses 3038 developer solution. After development, rinse with clean water and blow dry with nitrogen gas, and then dry the water vapor on a hot plate, so far the photolithography development step is completed. After ...
Embodiment 2
[0085] (1) Clean the sapphire substrate (No. 1) and dry it with nitrogen.
[0086] (2) Using the MOCVD method, first grow a GaN epitaxial layer on a sapphire substrate, then grow an n-GaN layer on the GaN epitaxial layer, and then grow an InGaN / GaN layer (also called an MQWs layer) on the n-GaN layer.
[0087] (3) Coat the photoresist on the InGaN / GaN layer for photolithography development. During the exposure process, a customized mask will be used, and the graphic area on the mask will be completely placed above the wafer, and an exposure time of 7s will be set. , through the exposure technology, the pattern on the designed mask plate is transferred to the photoresist layer. The exposed device needs to be developed to make the graphics appear. Development mainly uses 3038 developer solution. After development, rinse with clean water and blow dry with nitrogen gas, and then dry the water vapor on a hot plate, so far the photolithography development step is completed. After ...
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