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Resistive random access memory

A resistive variable memory and resistive variable technology, applied in the field of memory, can solve the problems of large fluctuation of resistive variable memory parameters, achieve the effects of reducing randomness, reducing current fluctuation, and improving reliability

Active Publication Date: 2019-06-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] What the present invention aims to solve is the problem that the parameter fluctuation of the resistive variable memory is large

Method used

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Examples

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Embodiment 1

[0028] This embodiment provides a resistive random access memory, figure 2 It is a schematic diagram of the structure of the resistive random access memory. The resistive random access memory includes a first metal layer 101, a resistive function layer 102, a material layer 104 with low mobility, and a second metal layer 103 that are sequentially stacked from top to bottom, wherein the low mobility layer More than one through hole 105 is provided on the material layer 104.

[0029] Specifically, the first metal layer 101 serves as a metal upper electrode, which may be a platinum material layer or a gold material layer. Further, the thickness of the first metal layer 101 may be 50 nanometers to 100 nanometers.

[0030] The resistive function layer 102 is a binary transition metal oxide material layer, which can be a tantalum oxide material layer, a hafnium dioxide material layer, a titanium dioxide material layer, a nickel oxide material layer, or a zirconium dioxide material laye...

Embodiment 2

[0037] Based on the same inventive concept, this embodiment provides a method for manufacturing a resistive random access memory. Figure 5 It is a flow chart of the method for preparing the resistive random access memory. The method for preparing the resistive random access memory includes steps S11 to S16.

[0038] S11, provide a substrate.

[0039] In this embodiment, provide Figure 6a The glass substrate 100 is shown.

[0040] S12, depositing a first metal layer on the upper surface of the substrate.

[0041] Such as Figure 6b As shown, the first metal layer 101 is deposited on the upper surface of the glass substrate 100 by a deposition method such as magnetron sputtering, ion beam sputtering, or electron beam evaporation. The first metal layer 101 serves as a metal upper electrode, which may be a platinum material layer or a gold material layer. Further, the thickness of the first metal layer 101 may be 50 nanometers to 100 nanometers.

[0042] S13, depositing a resistive func...

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Abstract

The invention discloses a resistive random access memory, which comprises a first metal layer, a resistive random function layer, a material layer with a low migration rate, and a second metal layer,wherein the first metal layer, the resistive random function layer, the material layer and the second metal layer are overlapped in sequence from top to bottom, and the material layer with the low migration rate is provided with more than one through hole. By use of the resistive random access memory provided by the invention, the size of an electric conduction filament can be controlled. Since the growth direction, the amount, the size of the electric conduction filament can be controlled, the growth randomness of the electric conduction filament can be lowered, and the current fluctuation ofthe resistive random access memory is reduced so as to reduce the parameter fluctuation of the resistive random access memory and improve the reliability of the resistive random access memory.

Description

Technical field [0001] The invention relates to the technical field of memory, in particular to a resistive random access memory. Background technique [0002] Resistive Random Access Memory (RRAM, Resistive Random Access Memory), as a new type of non-volatile memory, has the advantages of simple structure, fast working speed, low power consumption and stable information. It is a strong competitor of next-generation non-volatile memory one. figure 1 It is a schematic diagram of the structure of an existing resistive random access memory. The resistive random access memory includes a first metal layer 101, a resistive switching function layer 102, and a second metal layer 103 that are sequentially stacked from bottom to top. The working principle is: under the action of a forward electric field, the anode easily oxidizable metal of the second metal layer 103 as the upper electrode is oxidized into metal ions, and the metal ions pass through the resistive functional layer 102 to th...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 卢年端姜文峰李泠耿玓刘琦吕杭炳刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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