Can suppress mos in CuZnSnS thin films 2 Layer prefabricated layer structure and preparation method
A copper-zinc-tin-sulfur, prefabricated layer technology, applied in the field of solar cells, can solve the problems of uneven longitudinal distribution of Zn elements, and achieve the effects of improving photoelectric conversion efficiency, reducing series resistance, and uniform distribution
Active Publication Date: 2020-08-28
YUNNAN NORMAL UNIV
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Problems solved by technology
[0005] The purpose of the present invention is to provide a method for suppressing MoS in copper-zinc-tin-sulfur film 2 The optimized prefabricated layer structure and preparation method of the layer can effectively solve the uneven longitudinal distribution of Zn elements in CZTS solar cells and the high resistance MoS 2 layer problem, and ultimately improve the photoelectric conversion efficiency of CZTS solar cell devices
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Embodiment 1
[0022] (1) Soda-lime glass was used as the substrate, and the cleaning steps were as follows: ultrasonic cleaning with acetone for 20 minutes, ultrasonic cleaning with absolute ethanol for 20 minutes, ultrasonic cleaning with deionized water for 20 minutes, and drying in an oven at 70°C for later use.
[0023] (2) The metal back electrode Mo layer was deposited on the glass substrate by single-target DC magnetron sputtering. The target material is a metal Mo target with a purity of 99.99%. The sputtering gas is high-purity argon (purity 99.999%), and the gas flow rate is 20mL / min. Vacuum down to 5×10 - 4 Pa, the sputtering power is 80W, and the thickness of the deposited film is 1 μm.
[0024] (3) On the Mo layer of the metal back electrode, a CZTS thin film prefabricated layer was deposited by radio frequency magnetron sputtering. The target materials are Cu-Sn alloy target and ZnS target. The sputtering gas is high-purity argon (99.999%), and the gas flow rate is 5.5 sc...
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Abstract
The invention discloses a prefabricated layer structure capable of inhibiting an MoS2 layer in a copper zinc tin sulfide thin film and a preparation method. The prefabricated layer structure comprisesa glass substrate, a back electrode, a bottom Cu-Sn alloy layer, a ZnS layer and a top Cu-Sn alloy layer which are sequentially connected, wherein the back electrode is an Mo thin film and has a thickness of 1mum; the bottom Cu-Sn alloy layer is a Cu-Sn alloy thin film deposited by magnetron sputtering and has a thickness of 140nm; the ZnS layer is a ZnS thin film deposited by magnetron sputtering and has a thickness of 250 to 255nm; and the top Cu-Sn alloy layer is a Cu-Sn alloy thin film deposited by magnetron sputtering and has a thickness of 280nm. According to the invention, a copper zinc tin sulfide prefabricated layer is prepared by adopting CuSn / ZnS / CuSn layered sputtering, so that a generated Cu6Sn5 intermediate phase is more uniform; and according to a growth mechanism of the thin film, i.e., Cu6Sn5+S->Cu2SnS3 and Cu2SnS3+ZnS->Cu2ZnSnS4, by using ZnS as an interlayer, Zn is more uniformly distributed in the generated thin film, diffusion of S can be effectively controlled, and finally, formation of the excessively thick high-resistance MoS2 layer can be inhibited.
Description
technical field [0001] The invention relates to the field of solar cells, in particular to a method capable of suppressing MoS in copper-zinc-tin-sulfur thin films. 2 Optimized prefabricated layer structure and preparation method of layers. Background technique [0002] At present, replacing traditional fossil energy with clean energy has become the goal of the world. Photovoltaic power generation technology using solar power is a clean energy utilization technology with great development potential. In recent decades, solar cell technology has made great progress. CuIn(S, Se)-based 2 , CdTe, Cu(In,Ga)Se 4 (CIGS) and other solar cells have been extensively studied, but because these cell materials contain rare elements In and Ga as well as toxic elements Cd and Se, this limits the mass application of such cells. Based on this, people turn their attention to the non-toxic, abundant and cheap Cu 2 ZnSnS 4 (CZTS) thin film solar cells. This direct bandgap p-type semiconduc...
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IPC IPC(8): H01L31/032H01L31/0216H01L31/18
CPCY02P70/50
Inventor 郝瑞亭刘欣星郭杰顾康魏国帅刘斌王璐马晓乐孙帅辉
Owner YUNNAN NORMAL UNIV