Bending-resistant carbon nanotube/graphene composite film, its preparation method and application

A graphene composite and carbon nanotube technology, applied in the direction of graphene, nano-carbon, carbon compounds, etc., to achieve high bending resistance, mature operation technology, and good electromagnetic shielding performance

Active Publication Date: 2022-01-18
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at present, there is no carbon nanotube / graphene composite film with good electromagnetic shielding performance on the market.

Method used

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  • Bending-resistant carbon nanotube/graphene composite film, its preparation method and application
  • Bending-resistant carbon nanotube/graphene composite film, its preparation method and application
  • Bending-resistant carbon nanotube/graphene composite film, its preparation method and application

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preparation example Construction

[0029] The preparation principle of the present invention is that: the present invention carries out low-temperature carbonization treatment on carbon nanotube / graphene oxide composite film and high-temperature graphitization treatment in high-temperature graphitization furnace, and graphene oxide will be further reduced to reduction oxidation during the heating process. Graphene, in this process, graphene sheets continuously expand to form a porous structure, and due to the existence of carbon nanotubes, there will be carbon nanotubes between the two sheets to support and fix them, forming a porous network structure . The simultaneous improvement of the two processes of low-temperature carbonization and high-temperature graphitization endows the carbon nanotube / graphene composite film with excellent properties. After the graphitization treatment at 2200 ° C and above, the carbon nanotube / graphene composite film has The foldable property is mainly due to the support and fixati...

Embodiment 1

[0075] In step 1, the Hummer method was used to synthesize GO, and the GO solution was diluted to 0.3 mg / mL for later use, and its solvent was an aqueous solution. SDBS was used to disperse SWCNTs, and an aqueous solution was also used to prepare 1 mg / mL. First, it was treated with an ultrasonic cleaner for 1 hour, and then treated with an ultrasonic cell pulverizer for 2 hours to obtain a SWCNT dispersion.

[0076] Step 2: Prepare SWCNT / GO mixed solutions with SWCNT and GO mass ratios of 0, 2%, 4%, 6%, 8%, and 10% respectively, and prepare SWCNT / GO composite films by vacuum filtration.

[0077] Step 3: Carbonize the SWCNT / GO composite film in a tubular CVD furnace. The gas environment used is argon, and the temperature is raised from room temperature to 1000 °C at a heating rate of 5 °C / min, then kept for half an hour, and then cooled naturally to room temperature.

[0078] Step 4, put the carbonized sample in a high-temperature graphitization furnace, and perform high-tempe...

Embodiment 2

[0081] In step 1, the Hummer method was used to synthesize GO, and the GO solution was diluted to 0.3 mg / mL for later use, and its solvent was an aqueous solution. SDBS was used to disperse SWCNTs, and an aqueous solution was also used to prepare 1 mg / mL. First, it was treated with an ultrasonic cleaner for 1 hour, and then treated with an ultrasonic cell pulverizer for 2 hours to obtain a SWCNT dispersion.

[0082] Step 2: Prepare SWCNT / GO mixed solutions with SWCNT and GO mass ratios of 0, 2%, 4%, 6%, 8%, and 10% respectively, and prepare SWCNT / GO composite films by vacuum filtration.

[0083] Step 3: Carbonize the SWCNT / GO composite film in a tubular CVD furnace. The gas environment used is argon, and the temperature is raised from room temperature to 400 °C at a heating rate of 5 °C / min, and then kept for half an hour, and then cooled naturally to room temperature.

[0084] Step 4, put the sample after the carbonization treatment in a high-temperature graphitization furna...

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Abstract

The invention discloses a bending-resistant carbon nanotube / graphene composite film, a preparation method and application thereof. The carbon nanotube / graphene composite film has a porous network structure, and the composite film includes a porous structure formed by expansion of graphene sheets and carbon nanotubes, wherein at least part of the carbon nanotubes are distributed in the graphene sheets A three-dimensional network structure is formed between them. The preparation method includes: sequentially carbonizing and graphitizing the carbon nanotube / graphene oxide composite film in a protective atmosphere to obtain a bending-resistant carbon nanotube mainly composed of carbon nanotubes and reduced graphene oxide. tube / graphene composite film. In the present invention, the carbon nanotube / graphene oxide composite film is carbonized and graphitized, and the carbon nanotube is used to form a three-dimensional network structure between the graphene sheets, so as to obtain a composite film with high bending resistance and excellent bending resistance. A carbon nanotube / graphene composite film with good electromagnetic shielding properties.

Description

technical field [0001] The invention relates to the field of carbon nanotube / graphene oxide composite materials, in particular to a bending-resistant carbon nanotube / graphene composite film and a preparation method thereof. Background technique [0002] Nano-carbon materials, such as carbon nanotubes and graphene, have excellent electrochemical, mechanical and thermal properties, and have greater advantages over traditional metal materials in terms of thermal conductivity and electrochemical properties. At present, there are many studies on carbon nanotube and graphene composite films, but their processing of the composite structure is complicated, and the performance of the composite film has not been well improved. With the continuous development of modern technology, more and more electronic products are used in people's daily life. The electromagnetic interference of these electronic devices seriously affects the normal operation of electronic devices and the surrounding...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/168C01B32/184H05K9/00
Inventor 张永毅傅慧丽李清文胡冬梅
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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