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Nitride quantum well structure deep ultraviolet light emitting diode

A technology of light-emitting diodes and quantum wells, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low light extraction efficiency, and achieve the effect of improving light extraction efficiency

Active Publication Date: 2019-06-28
JIANGSU INST OF ADVANCED SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the low light extraction efficiency of deep ultraviolet nitride LEDs at present, a new quantum well structure can be proposed through quantum well structure design to improve the TE polarized light intensity of c-plane LEDs, thereby improving its light extraction efficiency

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  • Nitride quantum well structure deep ultraviolet light emitting diode
  • Nitride quantum well structure deep ultraviolet light emitting diode
  • Nitride quantum well structure deep ultraviolet light emitting diode

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Embodiment 1

[0020] In this embodiment, there is a nitride quantum well structure deep ultraviolet light-emitting diode with an InAlN insertion layer structure, such as figure 1 As shown, it includes a substrate 10 , a buffer layer 20 , a superlattice layer 30 , an N-type semiconductor layer 40 , a light emitting layer 50 , a P-type semiconductor layer 60 , and a P-type ohmic contact layer 70 in sequence. Wherein, the light-emitting layer 50 is composed of a barrier layer 51, a potential well layer 53, and In between the barrier layer and the potential well layer. x al 1-x A multi-quantum well structure formed by periodic stacking of N insertion layers 52 . In the quantum well x al 1-x The distribution of the indium composition of the N insertion layer is as follows Figure 7 shown. In x al 1-x The band gap of the N insertion layer is larger than that of the potential well layer, and the In x al 1-x The thickness of the N insertion layer is between 1-4 nanometers, and the indium c...

Embodiment 2

[0024] This embodiment discloses a deep ultraviolet light-emitting diode with a nitride quantum well structure. The difference from Embodiment 1 is that In x al 1-x The indium composition x of the N insertion layer increases or decreases from bottom to top, and the slope of the indium composition is between 2.5% and 10% (nm -1 ) range, such as Figure 8 shown. With this structure, the light extraction efficiency and luminous efficiency of the deep ultraviolet LED are improved.

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Abstract

The invention discloses a nitride quantum well structure deep ultraviolet light emitting diode which at least comprises an N-type semiconductor layer, a light-emitting layer and a P-type semiconductorlayer from bottom to top, the light-emitting layer is a multi-quantum well structure formed by alternately stacking barrier layers and potential well layers, and the improvement is that InxAl1-xN insertion layers are disposed between adjacent barrier layers and potential well layers, and the energy gaps of the InxAl1-xN insertion layers are larger than the energy gaps of the potential well layers. According to the nitride quantum well structure deep ultraviolet light emitting diode, by using the structural design of the InxAl1-xN insertion layers, the electron-hole overlap integration of a TM-dominated transition level is reduced, the spontaneous radiation efficiency of a TE mode is significantly enhanced, and the light extraction efficiency of a c-plane deep ultraviolet LED is improved.

Description

technical field [0001] The invention relates to the field of deep ultraviolet nitride LEDs, in particular to an AlGaN-based quantum well structure deep ultraviolet LED with improved TE polarization luminous efficiency. Background technique [0002] III-nitride LEDs can be used as ultraviolet (UV) light sources in many fields, such as sterilization, water purification, polymer curing, fluorescence analysis, sensing technology, etc. Compared with the traditional ultraviolet light source mercury lamp, the semiconductor UV light source has the advantages of adjustable frequency, small and portable, low power consumption, mercury-free and environmental protection. [0003] In the past ten years, nitride UV LEDs have made great progress, and the maximum external volume efficiency has reached 20%. Nevertheless, nitride UV LEDs still face many problems, such as lower epitaxial layer quality, higher Mg acceptor activation energy, lower light extraction efficiency and so on. In orde...

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Application Information

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IPC IPC(8): H01L33/06H01L33/32
Inventor 李毅钱星鹏朱友华王美玉
Owner JIANGSU INST OF ADVANCED SEMICON CO LTD