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Semiconductor structures and methods of forming them

A semiconductor and gate stack structure technology, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve problems such as performance degradation of NAND flash memory devices, achieve good boundary controllability, avoid aspect ratio, and improve tilt effect of the problem

Active Publication Date: 2021-07-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the introduction of the metal silicide process will easily lead to performance degradation of NAND flash memory devices

Method used

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  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them

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Experimental program
Comparison scheme
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Embodiment Construction

[0034] It can be seen from the background art that the metal silicide process easily leads to performance degradation of NAND flash memory devices. Combining with a method for forming a semiconductor structure, the reason for the performance degradation of the NAND flash memory device is analyzed.

[0035] Figure 1 to Figure 3 It is a structural schematic diagram corresponding to each step in a method for forming a semiconductor structure. The forming method includes:

[0036] refer to figure 1 , providing a base (not marked), the base includes a substrate 10, and a plurality of gate stack structures (not marked) on the substrate 10, the plurality of gate stack structures on the substrate Discretely set on the bottom 10.

[0037] Specifically, the gate stack structure includes: a gate insulating layer 11 on the substrate 10, a floating gate layer (Floating Gate) 12 on the gate insulating layer 11, a floating gate layer 12 on the A gate dielectric layer 13 on the layer 12...

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Abstract

A semiconductor structure and its forming method. The forming method includes: providing a base, including a substrate, and a plurality of stacked gate structures discretely arranged on the substrate. The stacked gate structure includes a precursor control gate layer; A dielectric layer is formed on the substrate exposed by the stack structure, and the dielectric layer exposes the top of the precursor control gate layer; part of the thickness of the precursor control gate layer is removed to form a groove in the dielectric layer; a conductive layer is formed in the groove through a deposition process, and the conductive layer is layer and the remaining precursor control gate layer constitute the control gate layer. In the present invention, a conductive layer is used to replace the metal silicide layer, and the conductive layer is formed through a deposition process, thereby reducing the thickness of the gate stack structure, correspondingly improving the tilt problem of the gate stack structure, and improving the boundary controllability and stability of the conductive layer. The topography quality is improved, and the material of the conductive layer is prevented from diffusing into the floating gate layer in the NAND flash memory device; in summary, the performance of the NAND flash memory device is improved by forming the conductive layer through a deposition process.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] At present, flash memory (Flash), also called flash memory, has become the mainstream of non-volatile memory (Non-volatile Memory, NVM). According to different structures, flash memory can be divided into two types: Nor Flash and NAND Flash. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control a wide range of applications. [0003] Due to the advantages of higher cell density, higher storage density, and faster writing and erasing speeds, NAND flash memory devices have gradually become a more commonly used structure in flash memory, and are currently m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11524H01L21/28H01L29/423H10B41/35
CPCH01L29/42324H01L29/4238H01L29/40114H10B41/35
Inventor 赵江曹恒罗文军周朝锋仇圣棻
Owner SEMICON MFG INT (SHANGHAI) CORP