A plasmon-enhanced deep ultraviolet detector and its manufacturing method

A technology of plasmon enhancement and manufacturing method, which is applied in the direction of electrical components, semiconductor devices, final product manufacturing, etc., can solve the problems of high responsivity and low dark current, so as to improve the absorption rate, improve the photoresponsivity, improve The effect of probing performance

Active Publication Date: 2021-02-23
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Application Information

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Problems solved by technology

AlGaN / GaN-based detectors include pin junctions, metal-semiconductor Schottky barriers, and metal-semiconductor-metal (MSM) structures, but these structures still face great challenges in obtaining low dark current and high responsivity

Method used

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  • A plasmon-enhanced deep ultraviolet detector and its manufacturing method
  • A plasmon-enhanced deep ultraviolet detector and its manufacturing method
  • A plasmon-enhanced deep ultraviolet detector and its manufacturing method

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Embodiment Construction

[0026] In view of the deficiencies in the prior art, the inventor of this case was able to propose the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows. However, it should be understood that within the scope of the present invention, each technical feature of the present invention and each technical feature specifically described in the following (such as an embodiment) can be combined with each other to form a new or preferred technical solution. Due to space limitations, we will not repeat them here.

[0027] One aspect of the embodiments of the present invention provides a plasmon-enhanced deep ultraviolet detector, which includes a heterojunction, a spline electrode and a periodic array of metal particles, and the spline electrode is formed on the heterostructure In conclusion, the periodic array of metal particles is formed bet...

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Abstract

The invention discloses a plasmon enhanced deep ultraviolet detector, its preparation method and application. The plasmon-enhanced deep ultraviolet detector includes a heterojunction, a spline electrode and a periodic metal particle array, the spline electrode is formed on the heterojunction, and the periodic metal particle array forms between the pinion electrodes. The invention utilizes the localized plasmons generated by the metal particles and the plasmon periodic diffraction resonance mode generated by the metal particle array to couple the incident light in the two ultraviolet bands to the metal nanostructure to realize the detector surface The light field of the two ultraviolet bands is enhanced, the absorption rate of the detector material to the incident light is improved, and the photoresponsivity of the deep ultraviolet detector to the two wavelengths is improved; and the plasmon resonance can be realized by adjusting the period and size of the metal particles Coupling with GaN / AlGaN detector detection wavelength.

Description

technical field [0001] The invention relates to a deep ultraviolet detector, in particular to a device structure of a plasmon-enhanced deep ultraviolet detector and a manufacturing method thereof, belonging to the field of light detection and semiconductor devices. [0002] technical background [0003] Under the excitation of incident light, metal particles will generate collective oscillation of surface electrons. Through the resonance of light and electrons, the light is confined to the surface of the metal particles in a range of tens of nanometers or even smaller, forming a strong local electromagnetic field, that is, surface localization. The domain plasmon effect can exhibit exotic optical properties. In addition, when metal particles form a periodic array, at a certain excitation electromagnetic wavelength, the diffraction pattern of the periodic array of particles interacts with the localized plasmon resonance of a single particle, showing a novel optical oscillation...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/109H01L31/18
CPCH01L31/02327H01L31/109H01L31/18Y02P70/50
Inventor 黄增立许蕾蕾刘通赵弇斐丁孙安
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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