Fabrication process and application of a vertical-heterodomain organic spintronic device

A technology of spintronic devices and preparation process, applied in the field of spintronics, can solve problems such as uncontrollable effective length, low device repetition rate, complex interface, etc., and achieve the effect of avoiding electrical short circuit and avoiding electrical short circuit

Active Publication Date: 2020-12-04
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the problem of interdiffusion at the organic / inorganic interface, the thickness of the organic layer is uncontrollable, the effective length of the electron spin diffusion channel in the vertical structure spin valve is uncontrollable, the device repetition rate is low, and the mechanism is controversial; tunneling junction devices need to be supplemented by insulation Isolation layer, complex interface, unclear mechanism
For lateral spin valves and non-local devices, the preparation of parallel electrodes depends on the development of micro-nano processing technology, although the control of electron spin has been realized in two-dimensional materials and inorganic semiconductors with some spin diffusion lengths on the order of microns , but there has been no breakthrough in organic matter

Method used

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  • Fabrication process and application of a vertical-heterodomain organic spintronic device
  • Fabrication process and application of a vertical-heterodomain organic spintronic device
  • Fabrication process and application of a vertical-heterodomain organic spintronic device

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Effect test

Embodiment 1

[0036] Using single crystal SrTiO 3 substrate, epitaxially grow a single crystal LSMO film with a thickness of 30nm on its surface, and optically etch it into a 50 micron wide strip electrode; then use the optical overlay method to grow Cr (5nm ) / Au(25nm) strip electrode; using ultra-high vacuum thermal evaporation to grow wedge-shaped organic layer Alq on the surface of LSMO and Cr / Au electrode 3 , the thickness of the wedge-shaped organic layer is 10-100nm, and the thickness of the wedge-shaped organic layer changes continuously along the direction of the LSMO strip electrode. The thinnest part is 10nm, and the thickest part is 100nm; A Co electrode with a thickness of 15nm is used, and a physical mask is used to realize the in-situ forming of the strip electrode. The direction is perpendicular to the LSMO electrode, and a NaCl protective layer is grown on the surface of the Co strip electrode.

[0037] The vertical-heterogeneous organic spintronic device prepared in this e...

Embodiment 2

[0040] Using single crystal SrTiO 3 substrate, epitaxially grow a single crystal LSMO film with a thickness of 30nm on its surface, and optically etch it into a 50 micron wide strip electrode; then use the optical overlay method to grow Cr (5nm ) / Au(25nm) strip electrode; using ultra-high vacuum thermal evaporation to grow wedge-shaped organic layer Alq on the surface of LSMO and Cr / Au electrode 3 , the thickness of the wedge-shaped organic layer is 10-100nm, and the thickness of the wedge-shaped organic layer changes continuously along the direction of the LSMO strip electrode. The thinnest part is 10nm, and the thickest part is 100nm; A Co electrode with a thickness of 15nm is used, and a physical mask is used to realize the in-situ forming of the strip electrode. The direction is perpendicular to the LSMO electrode, and a NaCl protective layer is grown on the surface of the Co strip electrode.

[0041] By applying a voltage between LSMO-Cr / Au, a spin-polarized current is i...

Embodiment 3

[0043] Using single crystal SrTiO 3 substrate, epitaxially grow a single crystal LSMO film with a thickness of 30nm on its surface, and optically etch it into a 50 micron wide strip electrode; then use the optical overlay method to grow Cr (5nm ) / Au(25nm) strip electrode; using ultra-high vacuum thermal evaporation to grow wedge-shaped organic layer Alq on the surface of LSMO and Cr / Au electrode 3 , the thickness of the wedge-shaped organic layer is 10-100nm, and the thickness of the wedge-shaped organic layer changes continuously along the direction of the LSMO strip electrode. The thinnest part is 10nm, and the thickest part is 100nm; A Co electrode with a thickness of 15nm is used, and a physical mask is used to realize the in-situ forming of the strip electrode. The direction is perpendicular to the LSMO electrode, and a NaCl protective layer is grown on the surface of the Co strip electrode.

[0044] By applying a voltage between LSMO-Cr / Au, a spin-polarized current is i...

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Abstract

The invention discloses a preparation process and application of a vertical heterogeneous organic spintronic device, which belongs to the field of spintronics. The invention combines the advantages of a lateral device and a vertical device. On the one hand, it injects a spin-polarized current laterally , the spin polarized current is injected into the organic material laterally to avoid the electrical short circuit problem of the vertical structure; on the other hand, the electron spin is detected vertically, and the length of the spin diffusion channel is the film thickness. The wedge-shaped organic film is used to realize the spin diffusion channel length of nanometers The level is continuously adjustable, and the manipulation and utilization of electron spins in organic matter can be realized in multiple modes through external electric and magnetic fields. The vertical heterogeneous organic spin electronic device of the present invention can be used to control the electron spin in the material whose spin diffusion length is on the order of nanometers, realize the manipulation of the electron spin in multiple modes in the same device, and can realize the organic spin valve The magnetoresistance effect, non-local magnetoresistance effect, spin Hanle effect.

Description

technical field [0001] The invention belongs to the field of spin electronics, and relates to a preparation process and application of a vertical-heterogeneous organic spin electronics device. Background technique [0002] Spintronics studies the manipulation and utilization of electron spins, endowing traditional electronic devices and optoelectronic devices with new functions. Compared with microelectronic devices, spintronic devices have the characteristics of fast response, high storage density, low energy consumption, and non-volatility. The weak spin-orbit coupling of organic substances and the hyperfine interaction of nuclear spin suppressed by π electrons, long spin relaxation time, easy preparation and low production cost are important materials for the wide application of spintronic devices in the future. At present, the principle device of organic spin electronics is mainly a vertical structure organic spin valve, which is composed of upper and lower magnetic ele...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L43/08
CPCH10N50/10H10N50/01
Inventor 方梅肖柱李周张桑箭李浩
Owner CENT SOUTH UNIV
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