A kind of preparation method of tantalum doped hafnium dioxide ferroelectric material

Abstract

The invention belongs to the field of materials, and in particular relates to a preparation method of a novel ferroelectric material doped with tantalum hafnium dioxide. The present invention proposes donor doping for the first time, in order to prepare HfO 2 Ferroelectric thin film materials offer a new route; Ta-doped HfO is avoided using Pt electrodes 2 The reaction between the material and the electrode material, the donor Ta-doped HfO was obtained by pulsed laser deposition, rapid annealing, etc. 2 Ferroelectric thin films, demonstrating that donor elements can also be used to promote HfO through doping 2 The thin film produces ferroelectricity. Donor-doped HfO 2 The realization of ferroelectric thin films can help us understand the valence of doping elements on HfO 2 Effect of Thin Film Ferroelectricity on Better Application of HfO 2 The ferroelectric thin film produces a positive boost.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to a preparation method of a tantalum-doped hafnium dioxide ferroelectric material. A pulsed laser (PLD) method is used to prepare a tantalum-doped hafnium dioxide ferroelectric film, thereby preparing a dielectric anomaly and a ferroelectric film. properties of ferroelectric materials. Background technique [0002] As a material that has been extensively studied and used, hafnium dioxide is mainly used as a high-k dielectric material in the semiconductor industry. As a high-k material, its dielectric constant is its key parameter, and doping is the adjustment Permittivity is very commonly used and effective way. After the discovery of ferroelectricity in 2011, hafnium dioxide has become a new material for ferroelectric memory because of its advantages that traditional ferroelectric materials do not have, such as ferroelectricity at a thickness of several nanometers, and compat...

AI Technical Summary

Problems solved by technology

But so far only a few elements have been doped with HfO 2 The ferroelectric properties of thin films are explored, mainly acceptors or equivalent doping of +2, +3 and +4 valence elements; there are also doping effects of a large number of elements (whether ferroelectricity can be generated, how is ferroelectricity) not studied, and doping promotes HfO 2 The mechanism by which thin films generate ferroelectricity is still unclear, so exploring new ones can make HfO 2 It is very important to understand the doping elements that produce ferroelectricity in thin films and the properties of ferroelectric films produced by them. For HfO with different ferroelectric properties 2 Ferroelectric thin films, understanding doping-driven HfO 2 The mechanism of ferroelectricity in thin films and better application of HfO 2 Ferroelectric thin films are of great value

[0004] In summary, doping can greatly change the properties of hafnium dioxide, which can make it produce dielectric, ferroelectric, antiferroelectric, etc., but doping HfO 2 Thin film research still has a lot of work to do

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