Semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of insufficient depletion, devices that cannot provide high-level breakdown voltage, and limited optimization of gate polycrystalline boundary electric field and other issues to achieve the effect of increasing the breakdown voltage
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[0056] The present invention provides a method for preparing a semiconductor device, such as figure 1 As shown, the main steps of the preparation method include:
[0057] Step S101: providing a semiconductor substrate formed with a body region, a gate dielectric layer and a field oxide layer;
[0058] Step S102: forming a gate polycrystalline, the gate polycrystalline covering the gate dielectric layer and the field oxide layer, and exposing at least part of the field oxide layer;
[0059] Step S103: Use the drift region masking layer as a mask to form a drift region in the semiconductor substrate by ion implantation, and continue to use the drift region masking layer as a mask to remove the exposed field oxide layer to form a contact with the gate A first field oxide self-aligned with very polycrystalline silicon, the gate polycrystalline being used as a first field plate;
[0060] Step S104: forming a source region in the body region, and forming a drain region in the drift region; ...
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