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Packaging film, preparation method thereof, and photoelectric device

A technology for encapsulating films and composite films, which is applied in the field of device encapsulation, can solve problems such as poor bending resistance and water-oxygen barrier properties, and achieve the effects of improving water-oxygen barrier properties, reducing holes, and enhancing bonding properties

Inactive Publication Date: 2019-07-05
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above deficiencies in the prior art, the object of the present invention is to provide a packaging film and its preparation method, and a photoelectric device, aiming to solve the problems of poor bending resistance and water-oxygen barrier performance of the existing packaging film

Method used

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  • Packaging film, preparation method thereof, and photoelectric device
  • Packaging film, preparation method thereof, and photoelectric device
  • Packaging film, preparation method thereof, and photoelectric device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] 1. The preparation method of encapsulation film comprises steps:

[0045] 1) On the top surface of the silver electrode of the photoelectric device, the aluminum nitride target is sputtered into a film by radio frequency sputtering, and the thickness of the aluminum nitride film is 50nm;

[0046] 2) Using the combination of inert gas ion implantation and sputtering, in the vacuum chamber, the vacuum degree is less than 10 -4 T, synchronously and uniformly implanting organic material PI, inorganic material silicon nitride and high-energy argon ions into the surface layer of the aluminum nitride film to form a mixed injection layer in the surface layer of the aluminum nitride film;

[0047] 3) When the mixed injection layer is sufficiently tight, a composite film is formed on the surface of the aluminum nitride film, and the thickness of the composite film is 150 nm.

Embodiment 2

[0049] 1. The preparation method of encapsulation film comprises steps:

[0050] 1) Evaporate silicon oxide to form a film on the top surface of the silver electrode of the photoelectric device by evaporation, and the thickness of the silicon oxide film is 100nm;

[0051] 2) Using the combination of inert gas ion implantation and sputtering, in the vacuum chamber, the vacuum degree is less than 10 -4 T, synchronously and uniformly implanting organic material PET, inorganic material silicon oxide, and high-energy argon ions into the surface layer of the silicon oxide film to form a mixed injection layer in the surface layer of the silicon oxide film;

[0052] 3) When the mixed injection layer is sufficiently tight, a composite film is formed on the surface of the silicon oxide film, and the thickness of the composite film is 200 nm.

Embodiment 3

[0054] 1. The preparation method of encapsulation film comprises steps:

[0055] 1) On the top surface of the silver electrode of the photoelectric device, silicon nitride is deposited into a film by ALD atomic deposition method, and the thickness of the silicon nitride film is 150nm;

[0056] 2) Using the combination of inert gas ion implantation and sputtering, in the vacuum chamber, the vacuum degree is less than 10 -4 T, synchronously and uniformly implanting organic material acrylic acid, inorganic material silicon nitride and high-energy argon ions into the surface layer of the silicon nitride film to form a mixed injection layer in the surface layer of the silicon nitride film;

[0057] 3) When the mixed injection layer is sufficiently dense, a composite film is formed on the surface of the silicon nitride film, and the thickness of the composite film is 300 nm.

[0058] In summary, the present invention provides packaging films, including laminated ceramic films and c...

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Abstract

The invention discloses a packaging film, a preparation method thereof and a photoelectric device, and the packaging film comprises a ceramic film and a composite film which are arranged in a laminated manner. The method comprises the steps: employing a sputtering and ion implantation combined method; injecting high-energy inert gas ions to inject an organic material and an inorganic material sputtered on the surface of the ceramic film into the ceramic film together, and forming an organic-inorganic mixed injection layer; when the injection layer is dense enough, forming a composite film is formed. Due to the injection of high-energy inert gas ions and the organic and inorganic materials, the holes in the ceramic film are reduced, the bonding performance between the ceramic film and the composite film is effectively enhanced, and the water and oxygen barrier performance of the packaging film is obviously improved; meanwhile, due to the injection of high-energy inert gas ions and the organic and inorganic materials, the surface of the ceramic film is modified, and the bending resistance of the packaging film is obviously enhanced.

Description

technical field [0001] The invention relates to the technical field of device packaging, in particular to a packaging film, a preparation method thereof, and a photoelectric device. Background technique [0002] OLED optoelectronic devices are sensitive to water vapor and oxygen in the air, and are easy to react with water vapor and oxygen, which will affect the luminous performance, so they need to be packaged. Commonly used packaging technologies include cover plate packaging technology and thin film packaging technology, among which thin film packaging technology is the current mainstream technology. [0003] The more mature thin-film packaging technology is the Barix multi-layer thin-film packaging technology, but the inorganic water-blocking and oxygen-blocking packaging layer prepared in the current process, due to the intrinsic cohesive stress of the material, holes are prone to appear at the grain boundaries of the film, and the external water vapor , Oxygen is easy...

Claims

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Application Information

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IPC IPC(8): H01L51/52
CPCH10K50/844
Inventor 谢铭曹蔚然
Owner TCL CORPORATION
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