A kind of surface-enhanced Raman spectroscopy silver-plating active substrate and preparation method thereof
A surface-enhanced Raman and active substrate technology, applied in Raman scattering, material analysis through optical means, instruments, etc., can solve the complex process of SERS active substrate, the difficulty of preparing large-area uniform substrate samples, and high preparation costs. problem, to achieve good surface-enhanced Raman scattering, large-area uniform deposition, and improved enhancement effect
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[0042] figure 1 It is a method flowchart of a method for preparing a surface-enhanced Raman spectrum silver-plated active substrate shown according to an exemplary embodiment, such as figure 1 Shown, the preparation method of this surface-enhanced Raman spectrum silver-plated active substrate comprises:
[0043] Step 100: configure the plating solution at room temperature, the components of the plating solution include 10-15 g / L AgNO 3 , 35~45g / L 5-ureidohydantoin, 10~15 g / L isonicotinic acid, 35~45 g / L K 2 CO 3 , 0.1-0.4 g / L grain refiner and 0.05-0.2 g / L other additives, the pH of the plating solution is adjusted to 7-8 by KOH solution.
[0044] It should be noted that, in the plating solution provided by the embodiment of the present invention, AgNO 3 As the main salt, 5-ureidohydantoin as the main complexing agent, isonicotinic acid as the auxiliary complexing agent, K 2 CO 3 As a conductive salt, use KOH solution to adjust the pH to 7~8.
[0045] In a preferred emb...
Embodiment 1
[0078] (1) At a temperature of 42°C, place the copper in absolute ethanol for 15 minutes and then clean it with deionized water and dry it. The ultrasonic power used in the ultrasonic cleaning process is 80%.
[0079] (2) At a temperature of 40°C, place the ultrasonically cleaned copper in a degreasing solution for cathodic electrochemical degreasing treatment for 5 minutes, then wash and dry it with deionized water. The current density used in the cathodic electrochemical degreasing process is 4A / dm 2 .
[0080] (3) At a temperature of 45°C, put the red copper after cathodic electrochemical degreasing treatment in the polishing solution for anodic electropolishing treatment, then use deionized water to clean and dry, and the current density used in the anodic electrolytic polishing treatment process is 7A / dm 2 .
[0081] (4) Heat the plating solution to 42°C by heating in a water bath, then place red copper in the plating solution, use red copper as the cathode, and use th...
Embodiment 2
[0083] (1) At a temperature of 45°C, place the copper in absolute ethanol for 15 minutes and then clean it with deionized water and dry it. The ultrasonic power used in the ultrasonic cleaning process is 80%.
[0084] (2) At a temperature of 40°C, place the ultrasonically cleaned copper in a degreasing solution for cathodic electrochemical degreasing treatment for 5 minutes, then wash and dry it with deionized water. The current density used in the cathodic electrochemical degreasing process is 4A / dm 2 .
[0085] (3) Under the temperature condition of 42°C, put the red copper after cathodic electrochemical degreasing treatment in the polishing solution for anodic electropolishing treatment, then use deionized water to clean and dry, and the current density used in the anodic electrolytic polishing treatment process is 8A / dm 2 .
[0086] (4) Heat the plating solution to 42°C by heating in a water bath, then place red copper in the plating solution, use red copper as the cath...
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