Flip LED chip and fabrication method thereof

A technology of LED chip and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low light extraction efficiency, impure light chromaticity, side blue leakage, etc., achieves strong flexibility, reduces blue leakage, light reduction effect

Pending Publication Date: 2019-07-19
FOSHAN NATIONSTAR SEMICON
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  • Abstract
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Problems solved by technology

[0004] In terms of luminous efficiency of flip-chip LED chips, due to the influence of secondary optical reflection, the light output efficiency is low; in addition, the phosphor powder coated on the LED chip is also prone to the problem of side blue leakage due to the large light output angle, resulting in The problem of low light efficiency and impure light chromaticity

Method used

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  • Flip LED chip and fabrication method thereof
  • Flip LED chip and fabrication method thereof
  • Flip LED chip and fabrication method thereof

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Embodiment Construction

[0066] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0067] see figure 1 , a flip-chip LED chip provided by the present invention includes a substrate 10, an epitaxial layer 20 disposed on the substrate 10, a transparent conductive layer 40 disposed on the epitaxial layer 20, and a changeable LED chip disposed on the transparent conductive layer 40. The transparent curved surface layer 50 , the reflective layer 60 disposed on the changeable transparent curved surface layer 50 , the insulating layer 70 disposed on the reflective layer 60 , and the first electrode 81 and the second electrode 82 .

[0068] Specifically, the material of the substrate 10 of the present invention may be sapphire, silicon carbide or silicon, or other semiconductor materials. Preferably, the substrate 10 of the present invention is a sapph...

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Abstract

The invention discloses a flip LED chip. The flip LED chip comprises a substrate, an epitaxial layer, a transparent conductive layer, a variable transparent curve-surface layer, a reflection layer, aninsulation layer, a first electrode and a second electrode, wherein the epitaxial layer is arranged on the substrate, the transparent conductive layer is arranged on the epitaxial layer, the variabletransparent curve-surface layer is arranged on the transparent conductive layer, the reflection layer is arranged on the variable transparent curve-surface layer, the insulation layer is arranged onthe reflection layer, a contact surface of the variable transparent curve-surface layer and the reflection layer is a convex curve surface, and the variable transparent curve-surface layer is made ofa transmitting material of which the reflective index is larger than that of air. Correspondingly, the invention also provides a fabrication method of the flip LED chip. By arranging the variable transparent curve-surface layer between the transparent conductive layer and the reflection layer, the light giving-out efficiency of the chip is improved.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a flip-chip LED chip and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor device that uses carrier recombination to release energy to form light. LED chips have low power consumption, pure chromaticity, long life, small size, fast response time, energy saving and environmental protection, etc. Many advantages. [0003] Flip-chip LED chip is a new type of LED chip in recent years. Its main function is that there is no packaging process, which greatly saves production efficiency. It can be applied to high current and can realize ultra-miniature LEDs. [0004] In terms of luminous efficiency of flip-chip LED chips, due to the influence of secondary optical reflection, the light output efficiency is low; in addition, the phosphor powder coated on the LED chip is also prone to the problem o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/46
CPCH01L33/44H01L33/46H01L2933/0025H01L2933/0091
Inventor 仇美懿庄家铭
Owner FOSHAN NATIONSTAR SEMICON
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