Semiconductor structure and semiconductor process method

Abstract

The invention provides a semiconductor structure and a semiconductor process method. The semiconductor process method comprises the following steps of providing a wafer; forming a dielectric layer onthe wafer; etching the dielectric layer to form an etched via hole in the dielectric layer; forming a metal interconnection layer in the etched via hole; forming a protective layer on the upper surface of the dielectric layer and the upper surface of the metal interconnection layer; and trimming the wafer. The semiconductor processing method provided by the invention performs a photolithography etching process to form an etched via hole before performing a trimming process on the wafer and forms a metal interconnection layer in the etched via hole, and no photolithography process is performedafter the wafer is trimmed, and there is no photoresist residue at the corners formed after the wafer trimming process, thereby avoiding the occurrence of defects and improving the yield of the product. At the same time, it is not necessary to backfill the etched via hole before trimming the wafer, which simplifies the generation process, improves the production efficiency and saves the productioncosts.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit design and manufacture, and in particular relates to a semiconductor structure and a semiconductor process method. Background technique [0002] In some existing semiconductor processes, wafers need to be trimmed. For example, one of the wafers needs to be trimmed before bonding two wafers to ensure that the two wafers are trimmed. After the round bonding is completed, no peeling (Peeling) phenomenon will occur in the process of thinning the bonded structure. Then, since the wafer that has been sliced ​​will have a right-angle step in the edge region of the wafer, the existence of the right-angle step makes the photoresist (PR) spin coating process of the subsequent photolithography process on the wafer In this case, the photoresist will accumulate at the right-angle step, and the height of the photoresist accumulation at the right-angle step is several times or even ten times the thic...

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Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a semiconductor structure and a semiconductor process method for solving the problem of trimming the wafer before performing the photolithography process on the wafer in the prior art. The photoresist caused by processing tends to remain on the right-angled steps on the edge of the wafer, which will cause defects in the subsequent process and affect the yield of the product.

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