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Crystal pulling system

A silicon crystal and cylindrical technology, applied in the field of crystal pulling system, can solve the problems affecting the efficiency of silicon single crystal manufacturing and the improvement of production capacity, and achieve the effects of accelerated cooling, improved efficiency, and accelerated operation speed

Inactive Publication Date: 2019-07-30
ZING SEMICON CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the current process of preparing large-size silicon single crystals, it usually takes 10-15 hours to cool down after the end, so that the temperature of the thermal field is lowered to room temperature before cleaning and charging the furnace. This process greatly affects the production of silicon single crystals. Efficiency, which affects the improvement of production capacity

Method used

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Embodiment Construction

[0024] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0025] It should be understood that the invention can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0026] It will be understood that when an element or layer is referred t...

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Abstract

The invention provides a crystal pulling system. The system comprises a thermal field cooling device, and the thermal field cooling device comprises a cylindrical heat absorbing device and a cooling liquid loop which is arranged inside the cylindrical heat absorbing device; the length direction of the cylindrical heat absorbing device is consistent with the crystal pulling direction, the cooling liquid loop is arranged in the length direction, and the thermal field cooling device is used for cooling a thermal field which is generated by heating a silicon melt in a crucible. According to the crystal pulling system, the thermal field in a crystal pulling chamber can be cooled through the thermal field cooling device after crystal pulling is finished; the cylindrical heat absorbing device absorbs heat of the thermal field, the cooling liquid loop in the cylindrical heat absorbing device takes away the heat, thus cooling of the thermal field is accelerated, the efficiency of cooling the thermal field is improved, the efficiency of the crystal pulling manufacturing technology is further improved, and the capacity is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a crystal pulling system. Background technique [0002] The Czochralski method (hereinafter referred to as "CZ method") is the most widely used single crystal preparation method in the manufacture of silicon wafers. The CZ method is a method in which a seed crystal is immersed in molten silicon in a quartz crucible, and a single crystal is grown while being pulled. The silicon pillars formed by the CZ method are further cut to form silicon wafers. [0003] In the process of pulling and preparing silicon crystal columns, it mainly includes nine steps of feeding, chemicalizing, stabilizing, seeding, shouldering, equalizing, finishing, cooling, and cleaning the heat field. In the current industrialized large-scale production of silicon single crystals, continuous optimization of process parameters and thermal field design to reduce crystal growth costs and improve productio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06
Inventor 邓先亮
Owner ZING SEMICON CORP
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