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A kind of al-doped bicuseo-based thermoelectric material and preparation method thereof

A technology of thermoelectric materials and raw materials, which is applied in the field of Al-doped BiCuSeO-based thermoelectric materials and its preparation, can solve the problems of limited application, low ZT value, low conductivity, etc., and achieve huge conductivity, enhanced conductivity, and high conductivity Effect

Active Publication Date: 2022-03-25
GUANGXI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the extremely low conductivity leads to a low ZT value, which limits its application in the field of thermoelectric materials.

Method used

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  • A kind of al-doped bicuseo-based thermoelectric material and preparation method thereof
  • A kind of al-doped bicuseo-based thermoelectric material and preparation method thereof
  • A kind of al-doped bicuseo-based thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A preparation method of Al-doped BiCuSeO-based thermoelectric material, comprising the following steps:

[0035] (1) Using Bi, Cu, Bi 2 O 3 , Se, Al, Al 2 O 3 Powder as raw material, according to Bi:Cu:Bi 2 O 3 :Se:Al:Al 2 O 3=(1-x) / 3:1:(1-x) / 3:1:x / 3:x / 3 The ratio of the amount of the substance to the ingredients, x=0.025; mix the components evenly to obtain a mixed powder ;

[0036] (2) Pour the mixed powder into the ball mill, according to the ratio of 10:1 ball to material, ball mill for 5h under argon protection at a rotational speed of 500r / min, the powder obtained by ball milling is then ground with an agate mortar for 45min, and then placed in vacuum drying Drying in the box, drying at 70°C for 8h to obtain dry powder;

[0037] (3) The dry powder is sealed in a vacuum quartz tube, and then placed in a muffle furnace for high-temperature solid-phase reaction, heated to 350 °C at a heating rate of 5 °C / min, kept for 8 hours, and then the temperature of the...

Embodiment 2

[0042] A preparation method of Al-doped BiCuSeO-based thermoelectric material, comprising the following steps:

[0043] (1) Using Bi, Cu, Bi 2 O 3 , Se, Al, Al 2 O 3 Powder as raw material, according to Bi:Cu:Bi 2 O 3 :Se:Al:Al 2 O 3 =(1-x) / 3:1:(1-x) / 3:1:x / 3:x / 3 The ratio of the amount of the substance to the ingredients, x=0.05; mix the components evenly to obtain a mixed powder ;

[0044] (2) Pour the mixed powder into the ball mill, according to the ball-to-material ratio of 15:1, ball-mill at 300r / min under argon protection for 6h, the powder obtained by ball-milling is then ground with an agate mortar for 60min, and then placed in vacuum drying Drying in the box, drying at 60°C for 10h to obtain dry powder;

[0045] (3) The dry powder is sealed in a vacuum quartz tube, and then placed in a muffle furnace for high-temperature solid-phase reaction, heated to 300 °C at a heating rate of 5 °C / min, kept for 10 hours, and then the temperature of the muffle furnace is r...

Embodiment 3

[0050] A preparation method of Al-doped BiCuSeO-based thermoelectric material, comprising the following steps:

[0051] (1) Using Bi, Cu, Bi 2 O 3 , Se, Al, Al 2 O 3 Powder as raw material, according to Bi:Cu:Bi 2 O 3 :Se:Al:Al 2 O 3 =(1-x) / 3:1:(1-x) / 3:1:x / 3:x / 3 The ratio of the amount of the substance to the ingredients, x=0.075; mix the components evenly to obtain a mixed powder ;

[0052] (2) Pour the mixed powder into the ball mill, according to the ball-to-material ratio of 20:1, ball-mill at 500r / min under argon protection for 5h, the powder obtained by ball-milling is then ground with an agate mortar for 30min, and then placed in vacuum drying Drying in the box, drying at 50°C for 12h to obtain dry powder;

[0053] (3) The dry powder was sealed in a vacuum quartz tube, and then placed in a muffle furnace for high-temperature solid-phase reaction, heated to 350 °C at a heating rate of 5 °C / min, kept for 8 hours, and then the muffle furnace temperature was raised...

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Abstract

The invention discloses an Al-doped BiCuSeO-based thermoelectric material and a preparation method thereof, according to Bi:Cu:Bi 2 o 3 :Se:Al:Al 2 o 3 =(1-x) / 3:1:(1-x) / 3:1:x / 3:x / 3 The ratio of the amount of substance ingredients, 0.025≤x≤0.125; each component is mixed uniformly to obtain Mixed powder; ball mill the mixed powder, grind it with an agate mortar, and then dry it in a drying box to obtain a dry powder; seal the dry powder into a vacuum quartz tube, and then place it in a muffle furnace for high-temperature solid-state reaction. After the furnace is cooled, break the vacuum quartz tube to take out the sample powder, grind it with an agate mortar, put the ground powder into a graphite mold, and put it into a hot-press sintering furnace for sintering; after the sintering is completed and cooled, it is demolded to obtain Al-doped BiCuSeO based thermoelectric materials. The Al-doped BiCuSeO-based thermoelectric material prepared by the invention has high purity, low thermal conductivity, high electrical conductivity, good electrical transmission performance, high power factor and high dimensionless thermoelectric figure of merit ZT.

Description

technical field [0001] The invention belongs to the technical field of new energy materials, in particular to an Al-doped BiCuSeO-based thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials, also known as thermoelectric materials, are new functional materials that use the Seebeck effect to convert thermal energy into electrical energy, and its reverse reaction Peltier effect to directly cool or heat electrical energy. These properties of thermoelectric materials, It is used in thermoelectric power generation and semiconductor refrigeration. It can be made into a thermoelectric generator or reversely used as a refrigeration device. These thermoelectric devices have the advantages of lightweight structure, small footprint, long service life, environmental protection, and suitable for harsh environments, not only for manufacturers of green products. It provides the development direction of the product, and further enab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/01C04B35/622
CPCC04B35/01C04B35/622C04B2235/40C04B2235/407C04B2235/3298C04B2235/42C04B2235/402C04B2235/3217C04B2235/96C04B2235/9607
Inventor 李安敏徐飞程晓鹏蒙天力
Owner GUANGXI UNIV