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NiO oxide semiconductor xylene sensor and preparation method and application thereof

A technology of oxide semiconductor and xylene, which is applied in the field of NiO oxide semiconductor xylene sensor and its preparation, can solve the problem that the concentration of xylene needs to be further improved, achieve low detection limit, good repeatability and long-term stability, and widely The effect of detection range

Inactive Publication Date: 2019-08-02
HAINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In recent years, around the semiconductor gas sensor used to detect xylene gas, extensive research has been carried out at home and abroad, but the use effect of the semiconductor gas sensor that has been developed so far in detecting the concentration of xylene in the atmospheric environment needs to be further improved

Method used

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  • NiO oxide semiconductor xylene sensor and preparation method and application thereof
  • NiO oxide semiconductor xylene sensor and preparation method and application thereof
  • NiO oxide semiconductor xylene sensor and preparation method and application thereof

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Experimental program
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Embodiment

[0034] A) Preparation of porous flower-like NiO:

[0035] (1) First use magnetic stirring to mix 2mmolNiCl 2 ·6H 2 O was dispersed in a beaker of 20ml absolute ethanol;

[0036] (2) After a few minutes, add 10mL of ammonia water (17wt%) into the beaker;

[0037] (3) Then 5mL NaOH aqueous solution (1mol / L) is added dropwise in the beaker;

[0038] (4) Dissolve 2gNaCl in the above solution afterwards;

[0039] (5) After 5 minutes, the mixed solution was transferred to a 45 mL Teflon-lined autoclave and heated at 180 °C for 12 hours;

[0040] (6) When the solvothermal process was completed, the autoclave was naturally cooled to room temperature;

[0041] (7) The obtained product was centrifuged and washed several times with distilled water and absolute ethanol, and then dried at 80° C. for 10 hours;

[0042] (8) Put the dried powder in a muffle furnace and sinter at 400° C. for 2 hours to finally obtain a porous flower-like NiO oxide semiconductor material.

[0043] The ab...

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Abstract

The invention, which belongs to the field of gas sensors, in particular relates to a NiO oxide semiconductor xylene sensor and a preparation method and application thereof. The NiO oxide semiconductorxylene sensor comprises a Al2O3 ceramic tube having the outer surface sleeved with two parallel and isolated annular Au electrodes, platinum wires connected to all Au electrodes, a semiconductor oxide sensitive material coating the outer surface of the Al2O3 ceramic tube and the annular Au electrodes, and a nickel-cadmium alloy coil arranged in the Al2O3 ceramic tube. The semiconductor oxide sensitive material is a orous flower-like NiO material. According to the invention, the porous flower-like NiO material is used as the sensitive material of the sensor and thus the gas sensor made of thesensitive material has a wide xylene detection range and a low detection limit being 5ppm and has the broad application prospects in xylene pollutant detection in an environment.

Description

technical field [0001] The invention belongs to the field of gas sensors, and in particular relates to a NiO oxide semiconductor xylene sensor and a preparation method and application thereof. Background technique [0002] Xylene (C 8 h 10 ) is a colorless and transparent liquid, volatile and has a pungent smell, flammable, easily soluble in organic solvents, and has a boiling point of 137-140 °C. It belongs to low-toxic chemical substances and is an indispensable chemical substance in industrial production. . Xylene is widely used as a solvent in coatings, resins, dyes, inks and other industries; it can also be used as a synthetic monomer or solvent in pharmaceuticals, pesticides and other industries; it can also be used as a gasoline component and an important raw material in organic chemicals. [0003] Xylene is irritating to the eyes and upper respiratory tract, and has an anesthetic effect on the central system at high concentrations. Dry skin, chapped skin, and derm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 王庆吉李朝阳赵昱博刘泽轩
Owner HAINAN UNIVERSITY