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Quantum dot composite film and preparation method thereof

A technology of quantum dots and composite films, which is applied in the direction of chemical instruments and methods, luminescent materials, etc., can solve the problems of unsatisfactory market applications, quantum dot film failure, optical performance degradation, etc., and achieve low sensitivity to factors such as water and oxygen and low cost. Low, mild condition effects

Active Publication Date: 2019-08-16
SUZHOU XINGSHUO NANOTECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] If the existing quantum dot film is placed in the air without the protection of barrier film, etc., the quantum dots in the quantum dot film are easily affected by water vapor and oxygen in the external environment, so that the quantum dots are destroyed and the optical performance is reduced. As a result, the quantum dot film fails and cannot meet the needs of market applications.

Method used

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Examples

Experimental program
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Effect test

preparation example Construction

[0032] The application also provides a method for preparing a quantum dot composite film, comprising the steps of:

[0033] S1, providing a quantum dot-hydrogel layer;

[0034] S2. Coating the silylating agent on the surface of the quantum dot-hydrogel layer;

[0035] S3. After placing the coated quantum dot-hydrogel layer for a period of time, a layer containing SiO is formed on the surface of the quantum dot-hydrogel layer. 2 And / or a water blocking layer of polysiloxane to obtain the quantum dot composite film.

[0036] In the present application, the silylating agent relies on the moisture in the air or in an environment with a certain humidity, or the moisture lost from the hydrogel layer, to perform a hydrolysis reaction to obtain a SiO-containing 2 And / or a water-blocking layer of polysiloxane and wrapped on the surface of the quantum dot-hydrogel layer, making it difficult for water vapor and oxygen in the external environment to penetrate from the outside to the ins...

Embodiment approach

[0055] According to a preferred embodiment of the present application, the quantum dots are selected from group IIB-VIA, group IIIA-VA, group IVA-VIA, group IB-IIIA-VIA, group IIB-IVA-VIA, group IIA-IVB-VA, VIII-VIA group single or composite structure quantum dots, or at least one of perovskite quantum dots. However, exemplary embodiments of the present application are not limited thereto.

[0056] In a specific embodiment, the quantum dots are selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、MgZnSe、MgZnS、HgZnTeS、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe、HgZnSTe、GaN、GaP、GaAs、 GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs...

Embodiment 1

[0072] Quantum dot composite film 1:

[0073] Includes: CH 3 NH 3 PbBr 3 Perovskite quantum dot-alginate layer; and

[0074] coated in CH 3 NH 3 PbBr 3 Perovskite quantum dots-containing SiO on the surface of alginate layer 2 of water blocking layer.

[0075] Preparation of quantum dot composite film 1:

[0076] S1, the CH 3 NH 3 PbBr 3 Mix perovskite quantum dots, chloroform, and sodium alginate evenly and stir to obtain CH 3 NH 3 PbBr 3 Perovskite quantum dots-sodium alginate hybrid system;

[0077] Among them, the mass of sodium alginate accounted for CH 3 NH 3 PbBr 3 20% of the mass of the perovskite quantum dot-sodium alginate hybrid system.

[0078] S2, the CH 3 NH 3 PbBr 3 The perovskite quantum dot-sodium alginate hybrid system is coated on the substrate material, and the coated substrate material is cured to obtain the cured CH 3 NH 3 PbBr 3 Perovskite quantum dots-sodium alginate mixture;

[0079] S3, make the cured CH 3 NH 3 PbBr 3 Separa...

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Abstract

The invention discloses a quantum dot composite film which comprises a quantum dot-hydrogel layer, and the surface of the quantum dot-hydrogel layer is coated with the waterproof layer. According to the invention, the hydrogel in the quantum dot-hydrogel layer has a protection effect on the quantum dots dispersed in the hydrogel layer, so that the adverse effects of water vapor and oxygen in the external environment on the quantum dots are reduced; the water blocking layer coating the surface of the quantum dot-hydrogel layer further blocks permeation of external water oxygen and the like, andkeeps the stable physical state of the quantum dot-hydrogel layer, so that the quantum dot composite film with low sensitivity to factors such as water oxygen and high stability is finally obtained.The preparation method is low in cost, mild in condition and suitable for large-scale production and popularization.

Description

technical field [0001] The present application relates to the field of luminescent materials, in particular to a quantum dot composite film and a preparation method thereof. Background technique [0002] Quantum dots have excellent properties such as narrow half-peak width, high luminous purity, and adjustable emission wavelength with size. As a wavelength conversion element, the quantum dot film can significantly improve the color gamut of the display and the utilization efficiency of the backlight, and has a wide range of applications in the display field. [0003] If the existing quantum dot film is placed in the air without the protection of barrier film, etc., the quantum dots in the quantum dot film are easily affected by water vapor and oxygen in the external environment, so that the quantum dots are destroyed and the optical performance is reduced. As a result, the quantum dot film fails, which cannot meet the needs of market applications. Contents of the inventio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/06C09K11/66C09K11/70C09K11/88
CPCC09K11/025C09K11/06C09K11/664C09K11/70C09K11/883
Inventor 邢泽咏王允军刘思锦
Owner SUZHOU XINGSHUO NANOTECH CO LTD